Improving lifetime in MLC phase change memory using slow writes

研究成果: 著書/レポートタイプへの貢献会議での発言

抄録

This paper reports the performance and endurance impacts of a slow-write approach for a multi-level cell (MLC) of phase change memory (PCM). An MLC improves the density of PCM, but the endurance is a critical issue. To extend the lifetime of the cell, a slow-write approach is one of the techniques that is used. However, the slow-write approach increases the program execution time because it takes a long time. In this paper, we discuss three types of slow-write approach for MLC and evaluate the endurance and performance quantitatively to understand the effectiveness of our approach. Our evaluation results show that one of the approaches enhances the endurance of MLC PCM 1.57 times with a 1.41 % performance degradation on average compared with the conventional write operation.

元の言語英語
ホスト出版物のタイトル2018 Proceedings of the Japan-Africa Conference on Electronics, Communications, and Computations, JAC-ECC 2018
出版者Institute of Electrical and Electronics Engineers Inc.
ページ65-68
ページ数4
ISBN(電子版)9781538692301
DOI
出版物ステータス出版済み - 4 1 2019
イベント2018 Japan-Africa Conference on Electronics, Communications, and Computations, JAC-ECC 2018 - Alexandria, エジプト
継続期間: 12 17 201812 19 2018

出版物シリーズ

名前2018 Proceedings of the Japan-Africa Conference on Electronics, Communications, and Computations, JAC-ECC 2018

会議

会議2018 Japan-Africa Conference on Electronics, Communications, and Computations, JAC-ECC 2018
エジプト
Alexandria
期間12/17/1812/19/18

Fingerprint

Phase change memory
Durability
Degradation

All Science Journal Classification (ASJC) codes

  • Computational Theory and Mathematics
  • Computer Networks and Communications
  • Electrical and Electronic Engineering

これを引用

Ono, T., Chen, Z., & Koji, I. (2019). Improving lifetime in MLC phase change memory using slow writes. : 2018 Proceedings of the Japan-Africa Conference on Electronics, Communications, and Computations, JAC-ECC 2018 (pp. 65-68). [8679540] (2018 Proceedings of the Japan-Africa Conference on Electronics, Communications, and Computations, JAC-ECC 2018). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/JEC-ECC.2018.8679540

Improving lifetime in MLC phase change memory using slow writes. / Ono, Takatsugu; Chen, Zhe; Koji, Inoue.

2018 Proceedings of the Japan-Africa Conference on Electronics, Communications, and Computations, JAC-ECC 2018. Institute of Electrical and Electronics Engineers Inc., 2019. p. 65-68 8679540 (2018 Proceedings of the Japan-Africa Conference on Electronics, Communications, and Computations, JAC-ECC 2018).

研究成果: 著書/レポートタイプへの貢献会議での発言

Ono, T, Chen, Z & Koji, I 2019, Improving lifetime in MLC phase change memory using slow writes. : 2018 Proceedings of the Japan-Africa Conference on Electronics, Communications, and Computations, JAC-ECC 2018., 8679540, 2018 Proceedings of the Japan-Africa Conference on Electronics, Communications, and Computations, JAC-ECC 2018, Institute of Electrical and Electronics Engineers Inc., pp. 65-68, 2018 Japan-Africa Conference on Electronics, Communications, and Computations, JAC-ECC 2018, Alexandria, エジプト, 12/17/18. https://doi.org/10.1109/JEC-ECC.2018.8679540
Ono T, Chen Z, Koji I. Improving lifetime in MLC phase change memory using slow writes. : 2018 Proceedings of the Japan-Africa Conference on Electronics, Communications, and Computations, JAC-ECC 2018. Institute of Electrical and Electronics Engineers Inc. 2019. p. 65-68. 8679540. (2018 Proceedings of the Japan-Africa Conference on Electronics, Communications, and Computations, JAC-ECC 2018). https://doi.org/10.1109/JEC-ECC.2018.8679540
Ono, Takatsugu ; Chen, Zhe ; Koji, Inoue. / Improving lifetime in MLC phase change memory using slow writes. 2018 Proceedings of the Japan-Africa Conference on Electronics, Communications, and Computations, JAC-ECC 2018. Institute of Electrical and Electronics Engineers Inc., 2019. pp. 65-68 (2018 Proceedings of the Japan-Africa Conference on Electronics, Communications, and Computations, JAC-ECC 2018).
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