Impurity induced periodic mesostructures in Sb-doped SnO2 nanowires

Annop Klamchuen, Takeshi Yanagida, Masaki Kanai, Kazuki Nagashima, Keisuke Oka, Tomoji Kawai, Masaru Suzuki, Yoshiki Hidaka, Shoichi Kai

研究成果: Contribution to journalArticle査読

8 被引用数 (Scopus)

抄録

Impurity doping on semiconductor nanowires formed via vaporliquidsolid (VLS) mechanism has been investigated with the intention being to control the transport properties. Here we demonstrate that an addition of excess impurity dopants induces a mesostructure of long range periodic arched-shape in Sb-doped SnO2 nanowires. The microstructural and composition analysis demonstrated the importance of the presence of impurities at the growth interface during VLS growth rather than the dopant incorporation into nanowires, indicating kinetically induced mechanisms.

本文言語英語
ページ(範囲)3251-3256
ページ数6
ジャーナルJournal of Crystal Growth
312
21
DOI
出版ステータス出版済み - 10 15 2010

All Science Journal Classification (ASJC) codes

  • 凝縮系物理学
  • 無機化学
  • 材料化学

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