In-depth analysis of high-quality Ge-on-insulator structure formed by rapid-melting growth

H. Chikita, R. Matsumura, Y. Tojo, H. Yokoyama, T. Sadoh, M. Miyao

研究成果: Contribution to journalArticle査読

2 被引用数 (Scopus)

抄録

High-quality Ge-on-insulator (GOI) structures are essential to realize next-generation large-scale integrated circuits, where GOI is employed as active layers of functional devices, as well as buffer layers for epitaxial growth of functional materials. In line with this, in-depth analysis of crystallinity of rapid-melting-grown GOI is performed. Structural and electrical measurements combined with a thinning technique reveal that the crystallinity of GOI (500 nm thickness) is very high and uniform in-depth direction, where high hole mobility (∼ 1000 cm2/V s) is achieved throughout the grown layers. These findings open up a possibility of application of rapid-melting-grown GOI to various advanced functional devices.

本文言語英語
ページ(範囲)139-142
ページ数4
ジャーナルThin Solid Films
557
DOI
出版ステータス出版済み - 4 30 2014

All Science Journal Classification (ASJC) codes

  • 電子材料、光学材料、および磁性材料
  • 表面および界面
  • 表面、皮膜および薄膜
  • 金属および合金
  • 材料化学

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