In-plane orientation control of c-axis oriented YBa2Cu3O7-δ films on MgO substrates by BaSnO3 buffer layers

Masashi Mukaida, Yoshinobu Takano, Kazuaki Chiba, Takuo Moriya, Masanobu Kusunoki, Shigetoshi Ohshima

研究成果: ジャーナルへの寄稿記事

18 引用 (Scopus)

抄録

A new BaSnO3 buffer layer is proposed for controlling the in-plane orientation of YBa2Cu3O7-δ films grown on MgO substrates. BaSnO3 buffer layers and YBa2Cu3O7-δ films are grown by pulsed laser deposition. 45° grain boundaries in YBa2Cu3O7-δ films grown on MgO (001) substrates, which are fatal defects for microwave device applications, are eliminated using the BaSnO3 buffer layer. YBa2Cu3O7-δ films grown at an optimum growth temperature of 710°C on BaSnO3 buffer layers on MgO (001) substrates show lower surface resistance (RS) than those on MgO (001) substrates without BaSnO3 buffer layers.

元の言語英語
ジャーナルJapanese Journal of Applied Physics, Part 2: Letters
38
発行部数8 B
出版物ステータス出版済み - 8 1 1999
外部発表Yes

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Buffer layers
buffers
Substrates
Surface resistance
Microwave devices
Growth temperature
Pulsed laser deposition
pulsed laser deposition
Grain boundaries
grain boundaries
microwaves
Defects
defects
temperature

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

これを引用

In-plane orientation control of c-axis oriented YBa2Cu3O7-δ films on MgO substrates by BaSnO3 buffer layers. / Mukaida, Masashi; Takano, Yoshinobu; Chiba, Kazuaki; Moriya, Takuo; Kusunoki, Masanobu; Ohshima, Shigetoshi.

:: Japanese Journal of Applied Physics, Part 2: Letters, 巻 38, 番号 8 B, 01.08.1999.

研究成果: ジャーナルへの寄稿記事

Mukaida, Masashi ; Takano, Yoshinobu ; Chiba, Kazuaki ; Moriya, Takuo ; Kusunoki, Masanobu ; Ohshima, Shigetoshi. / In-plane orientation control of c-axis oriented YBa2Cu3O7-δ films on MgO substrates by BaSnO3 buffer layers. :: Japanese Journal of Applied Physics, Part 2: Letters. 1999 ; 巻 38, 番号 8 B.
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abstract = "A new BaSnO3 buffer layer is proposed for controlling the in-plane orientation of YBa2Cu3O7-δ films grown on MgO substrates. BaSnO3 buffer layers and YBa2Cu3O7-δ films are grown by pulsed laser deposition. 45° grain boundaries in YBa2Cu3O7-δ films grown on MgO (001) substrates, which are fatal defects for microwave device applications, are eliminated using the BaSnO3 buffer layer. YBa2Cu3O7-δ films grown at an optimum growth temperature of 710°C on BaSnO3 buffer layers on MgO (001) substrates show lower surface resistance (RS) than those on MgO (001) substrates without BaSnO3 buffer layers.",
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AU - Mukaida, Masashi

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AU - Chiba, Kazuaki

AU - Moriya, Takuo

AU - Kusunoki, Masanobu

AU - Ohshima, Shigetoshi

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