In-plane orientation control of c-axis oriented YBa2Cu3O7-δ films on MgO substrates by BaSnO3 buffer layers

Masashi Mukaida, Yoshinobu Takano, Kazuaki Chiba, Takuo Moriya, Masanobu Kusunoki, Shigetoshi Ohshima

研究成果: ジャーナルへの寄稿学術誌査読

18 被引用数 (Scopus)

抄録

A new BaSnO3 buffer layer is proposed for controlling the in-plane orientation of YBa2Cu3O7-δ films grown on MgO substrates. BaSnO3 buffer layers and YBa2Cu3O7-δ films are grown by pulsed laser deposition. 45° grain boundaries in YBa2Cu3O7-δ films grown on MgO (001) substrates, which are fatal defects for microwave device applications, are eliminated using the BaSnO3 buffer layer. YBa2Cu3O7-δ films grown at an optimum growth temperature of 710°C on BaSnO3 buffer layers on MgO (001) substrates show lower surface resistance (RS) than those on MgO (001) substrates without BaSnO3 buffer layers.

本文言語英語
ページ(範囲)L926-L928
ジャーナルJapanese Journal of Applied Physics, Part 2: Letters
38
8 B
出版ステータス出版済み - 8月 1 1999
外部発表はい

!!!All Science Journal Classification (ASJC) codes

  • 工学(全般)
  • 物理学および天文学(その他)
  • 物理学および天文学(全般)

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