In-situ heating observation for formation behavior of polycrystalline silicon thin films fabricated using aluminum induced crystallization

Ken Ichi Ikeda; Takeshi Hirota; Kensuke Fujimoto; Youhei Sugimoto; Naoki Takata; Seiichiro Ii; Hideharu Nakashima; Hiroshi Nakashima

doi:10.2320/jinstmet.71.158

In-situ heating observation for formation behavior of polycrystalline silicon thin films fabricated using aluminum induced crystallization

Ken Ichi Ikeda, Takeshi Hirota, Kensuke Fujimoto, Youhei Sugimoto, Naoki Takata, Seiichiro Ii, Hideharu Nakashima, Hiroshi Nakashima

固体材料物性工学

研究成果: Contribution to journal › Article › 査読

1 被引用数 (Scopus)

抄録

The formation behavior of polycrystalline silicon thin films during the aluminum induced crystallization (AIC) was investigated by in-situ heating transmission electron microscopy (TEM). The electron dispersive X-ray spectroscopy (EDS) analysis of annealed sample was showed that layer exchange of the a-Si/Al film is occurred during the annealing. Furthermore, from the in-situ heating TEM observation and EDS analysis of as-deposited sample, it was confirmed the co-existence of Si and Al in a-Si/Al film and the lateral growth of crystalline Si grain. The mechanism of AIC and layer exchange were discussed from the experimental results and the phase diagram of Al-Si system.

本文言語	英語
ページ（範囲）	158-163
ページ数	6
ジャーナル	Nippon Kinzoku Gakkaishi/Journal of the Japan Institute of Metals
巻	71
号	2
DOI	https://doi.org/10.2320/jinstmet.71.158
出版ステータス	出版済み - 2 2007

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Mechanics of Materials
Metals and Alloys
Materials Chemistry

文献へのアクセス

10.2320/jinstmet.71.158

フィンガープリント「In-situ heating observation for formation behavior of polycrystalline silicon thin films fabricated using aluminum induced crystallization」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル

Ikeda, K. I., Hirota, T., Fujimoto, K., Sugimoto, Y., Takata, N., Ii, S., Nakashima, H., & Nakashima, H. (2007). In-situ heating observation for formation behavior of polycrystalline silicon thin films fabricated using aluminum induced crystallization. Nippon Kinzoku Gakkaishi/Journal of the Japan Institute of Metals, 71(2), 158-163. https://doi.org/10.2320/jinstmet.71.158

In-situ heating observation for formation behavior of polycrystalline silicon thin films fabricated using aluminum induced crystallization. / Ikeda, Ken Ichi; Hirota, Takeshi; Fujimoto, Kensuke; Sugimoto, Youhei; Takata, Naoki; Ii, Seiichiro; Nakashima, Hideharu ; Nakashima, Hiroshi.

In: Nippon Kinzoku Gakkaishi/Journal of the Japan Institute of Metals, Vol. 71, No. 2, 02.2007, p. 158-163.

研究成果: Contribution to journal › Article › 査読

Ikeda, KI, Hirota, T, Fujimoto, K, Sugimoto, Y, Takata, N, Ii, S, Nakashima, H & Nakashima, H 2007, 'In-situ heating observation for formation behavior of polycrystalline silicon thin films fabricated using aluminum induced crystallization', Nippon Kinzoku Gakkaishi/Journal of the Japan Institute of Metals, vol. 71, no. 2, pp. 158-163. https://doi.org/10.2320/jinstmet.71.158

Ikeda, Ken Ichi ; Hirota, Takeshi ; Fujimoto, Kensuke ; Sugimoto, Youhei ; Takata, Naoki ; Ii, Seiichiro ; Nakashima, Hideharu ; Nakashima, Hiroshi. / In-situ heating observation for formation behavior of polycrystalline silicon thin films fabricated using aluminum induced crystallization. In: Nippon Kinzoku Gakkaishi/Journal of the Japan Institute of Metals. 2007 ; Vol. 71, No. 2. pp. 158-163.

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abstract = "The formation behavior of polycrystalline silicon thin films during the aluminum induced crystallization (AIC) was investigated by in-situ heating transmission electron microscopy (TEM). The electron dispersive X-ray spectroscopy (EDS) analysis of annealed sample was showed that layer exchange of the a-Si/Al film is occurred during the annealing. Furthermore, from the in-situ heating TEM observation and EDS analysis of as-deposited sample, it was confirmed the co-existence of Si and Al in a-Si/Al film and the lateral growth of crystalline Si grain. The mechanism of AIC and layer exchange were discussed from the experimental results and the phase diagram of Al-Si system.",

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