TY - JOUR
T1 - In-situ heating observation for formation behavior of polycrystalline silicon thin films fabricated using aluminum induced crystallization
AU - Ikeda, Ken Ichi
AU - Hirota, Takeshi
AU - Fujimoto, Kensuke
AU - Sugimoto, Youhei
AU - Takata, Naoki
AU - Ii, Seiichiro
AU - Nakashima, Hideharu
AU - Nakashima, Hiroshi
PY - 2007/2
Y1 - 2007/2
N2 - The formation behavior of polycrystalline silicon thin films during the aluminum induced crystallization (AIC) was investigated by in-situ heating transmission electron microscopy (TEM). The electron dispersive X-ray spectroscopy (EDS) analysis of annealed sample was showed that layer exchange of the a-Si/Al film is occurred during the annealing. Furthermore, from the in-situ heating TEM observation and EDS analysis of as-deposited sample, it was confirmed the co-existence of Si and Al in a-Si/Al film and the lateral growth of crystalline Si grain. The mechanism of AIC and layer exchange were discussed from the experimental results and the phase diagram of Al-Si system.
AB - The formation behavior of polycrystalline silicon thin films during the aluminum induced crystallization (AIC) was investigated by in-situ heating transmission electron microscopy (TEM). The electron dispersive X-ray spectroscopy (EDS) analysis of annealed sample was showed that layer exchange of the a-Si/Al film is occurred during the annealing. Furthermore, from the in-situ heating TEM observation and EDS analysis of as-deposited sample, it was confirmed the co-existence of Si and Al in a-Si/Al film and the lateral growth of crystalline Si grain. The mechanism of AIC and layer exchange were discussed from the experimental results and the phase diagram of Al-Si system.
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U2 - 10.2320/jinstmet.71.158
DO - 10.2320/jinstmet.71.158
M3 - Article
AN - SCOPUS:34047117718
VL - 71
SP - 158
EP - 163
JO - Nippon Kinzoku Gakkaishi/Journal of the Japan Institute of Metals
JF - Nippon Kinzoku Gakkaishi/Journal of the Japan Institute of Metals
SN - 0021-4876
IS - 2
ER -