In-situ observation of impurity diffusion boundary layer in silicon Czochralski growth

Koichi Kakimoto, Minoru Eguchi, Hisao Watanabe, Taketoshi Hibiya

研究成果: ジャーナルへの寄稿記事

28 引用 (Scopus)

抄録

In-situ observation of the impurity diffusion boundary layer during single crystal growth of indium-doped silicon was carried out by X-ray radiography. The difference in the transmitted X-ray image compared with molten silicon just beneath the crystal-melt interface was attributed to the concentration of indium impurities having a larger absorption coefficient. The intensity profile of the transmitted X-ray can be reproduced by a transmittance calculation that considers the meniscus shape and impurity distribution. The impurity distribution profile near the crystal-melt interface was estimated using the Burton-Prim-Slichter (BPS) equation. The observed impurity diffusion boundary layer thickness was about 0.5 mm. It was found that the boundary layer thickness was not constant in the radial direction, which cannot be explained by the BPS theory, since it is based on a one-dimensional calculation.

元の言語英語
ページ(範囲)665-669
ページ数5
ジャーナルJournal of Crystal Growth
99
発行部数1-4
DOI
出版物ステータス出版済み - 1 1 1990

Fingerprint

Crystal growth from melt
Silicon
boundary layers
Boundary layers
Impurities
impurities
silicon
boundary layer thickness
Indium
indium
X ray radiography
X rays
Crystals
x rays
menisci
radiography
profiles
Crystallization
Crystal growth
crystals

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

これを引用

In-situ observation of impurity diffusion boundary layer in silicon Czochralski growth. / Kakimoto, Koichi; Eguchi, Minoru; Watanabe, Hisao; Hibiya, Taketoshi.

:: Journal of Crystal Growth, 巻 99, 番号 1-4, 01.01.1990, p. 665-669.

研究成果: ジャーナルへの寄稿記事

Kakimoto, Koichi ; Eguchi, Minoru ; Watanabe, Hisao ; Hibiya, Taketoshi. / In-situ observation of impurity diffusion boundary layer in silicon Czochralski growth. :: Journal of Crystal Growth. 1990 ; 巻 99, 番号 1-4. pp. 665-669.
@article{469a33767bfa4616956d9420a03077ff,
title = "In-situ observation of impurity diffusion boundary layer in silicon Czochralski growth",
abstract = "In-situ observation of the impurity diffusion boundary layer during single crystal growth of indium-doped silicon was carried out by X-ray radiography. The difference in the transmitted X-ray image compared with molten silicon just beneath the crystal-melt interface was attributed to the concentration of indium impurities having a larger absorption coefficient. The intensity profile of the transmitted X-ray can be reproduced by a transmittance calculation that considers the meniscus shape and impurity distribution. The impurity distribution profile near the crystal-melt interface was estimated using the Burton-Prim-Slichter (BPS) equation. The observed impurity diffusion boundary layer thickness was about 0.5 mm. It was found that the boundary layer thickness was not constant in the radial direction, which cannot be explained by the BPS theory, since it is based on a one-dimensional calculation.",
author = "Koichi Kakimoto and Minoru Eguchi and Hisao Watanabe and Taketoshi Hibiya",
year = "1990",
month = "1",
day = "1",
doi = "10.1016/S0022-0248(08)80003-6",
language = "English",
volume = "99",
pages = "665--669",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",
number = "1-4",

}

TY - JOUR

T1 - In-situ observation of impurity diffusion boundary layer in silicon Czochralski growth

AU - Kakimoto, Koichi

AU - Eguchi, Minoru

AU - Watanabe, Hisao

AU - Hibiya, Taketoshi

PY - 1990/1/1

Y1 - 1990/1/1

N2 - In-situ observation of the impurity diffusion boundary layer during single crystal growth of indium-doped silicon was carried out by X-ray radiography. The difference in the transmitted X-ray image compared with molten silicon just beneath the crystal-melt interface was attributed to the concentration of indium impurities having a larger absorption coefficient. The intensity profile of the transmitted X-ray can be reproduced by a transmittance calculation that considers the meniscus shape and impurity distribution. The impurity distribution profile near the crystal-melt interface was estimated using the Burton-Prim-Slichter (BPS) equation. The observed impurity diffusion boundary layer thickness was about 0.5 mm. It was found that the boundary layer thickness was not constant in the radial direction, which cannot be explained by the BPS theory, since it is based on a one-dimensional calculation.

AB - In-situ observation of the impurity diffusion boundary layer during single crystal growth of indium-doped silicon was carried out by X-ray radiography. The difference in the transmitted X-ray image compared with molten silicon just beneath the crystal-melt interface was attributed to the concentration of indium impurities having a larger absorption coefficient. The intensity profile of the transmitted X-ray can be reproduced by a transmittance calculation that considers the meniscus shape and impurity distribution. The impurity distribution profile near the crystal-melt interface was estimated using the Burton-Prim-Slichter (BPS) equation. The observed impurity diffusion boundary layer thickness was about 0.5 mm. It was found that the boundary layer thickness was not constant in the radial direction, which cannot be explained by the BPS theory, since it is based on a one-dimensional calculation.

UR - http://www.scopus.com/inward/record.url?scp=0025206378&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0025206378&partnerID=8YFLogxK

U2 - 10.1016/S0022-0248(08)80003-6

DO - 10.1016/S0022-0248(08)80003-6

M3 - Article

AN - SCOPUS:0025206378

VL - 99

SP - 665

EP - 669

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 1-4

ER -