In-situ transmission electron microscopy investigation of aluminum induced crystallization of amorphous silicon

Ram Kishore, Renu Sharma, Satoshi Hata, Noriyuki Kuwano, Yoshitsuga Tomokiyo, Hameed Naseem, W. D. Brown

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

抄録

The interaction of amorphous silicon (a-Si) and aluminum (Al) has been examined using in-situ transmission electron microscopy. Carbon coated nickel grids were used for depositing thin (∼50nm) amorphous silicon films using ultra high vacuum cluster tool and a thin film of Aluminum (∼50nm) was deposited subsequently on a-Si film by sputtering. The grid containing a-Si and Al films was mounted on a heating holder of FEI 200kV TEM and loaded in the TEM for viewing the microstructural and phase transformations during the in-situ heating process. The microstructural features and electron diffraction patterns in the plain view mode were observed with increase in temperature starting from 30 °C to 275 °C. The temperatures used in this experiment were 30,100,150,200, 225, 275°C . A sequential change in microstructural features and electron diffraction pattern due to interfacial diffusion of boundary between Al and amorphous Si was investigated. Evolution of polycrystalline silicon with randomly oriented grains as a result of a-Si and Al interaction was revealed. After the in-situ heating experiment the specimen was taken out and etched to remove excess of Al and the subjected to high resolution imaging under TEM and EDS analysis. The EDS analysis of the crystallized specimen was performed to locate the Al distribution in the crystallized silicon. It has been shown that Al induced crystallization can be used to convert sputtered a-Si into polycrystalline silicon as well as nanocrystalline silicon at a temperature near 275 °C by controlling the in-situ annealing parameters. The mechanism of AIC has been discussed from the experimental results and the phase diagram of Al-Si system.

本文言語英語
ホスト出版物のタイトルAmorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2008
出版社Materials Research Society
ページ345-351
ページ数7
ISBN(印刷版)9781605110363
DOI
出版ステータス出版済み - 2008
イベント2008 MRS Spring Meeting - San Francisco, CA, 米国
継続期間: 3 24 20083 28 2008

出版物シリーズ

名前Materials Research Society Symposium Proceedings
1066
ISSN(印刷版)0272-9172

その他

その他2008 MRS Spring Meeting
国/地域米国
CitySan Francisco, CA
Period3/24/083/28/08

All Science Journal Classification (ASJC) codes

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学

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