In situ heating and electron-beam irradiation in the transmission electron microscope were performed to study melting of submicron Al-11.6 at.% Si particles supported on a C thin film. It was found that electron irradiation could be used to melt the particles, even when the hot-stage sample holder was kept at a much lower temperature ([Formula Presented]) than the initial melting point of the particles. Comparison between the experimentally observed melting behavior and analytical calculations indicate that melting of the submicron Al-Si particles under electron-beam irradiation is caused by a temperature rise due to electron thermal spikes in the particles and poor thermal conduction away from the particles. These results have important implications in transmission electron microscopy studies of nanoparticles supported on thin films or poorly conducting substrates.
|ジャーナル||Physical review letters|
|出版ステータス||出版済み - 1月 1 2003|
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