Substrate pretreatment conditions at low pressures have been examined for enhancing nanocrystalline diamond formation on silicon in electron cyclotron resonance (ECR) plasma. Three kinds of pretreatments, (I) exposure to an ECR H 2 plasma with application of a substrate bias from -100 to +30 V, (II) hot-filament heating in H 2 gas, and (III) hot-filament heating in vacuum, were used alone or followed by carburization prior to a two-step process of ion-enhanced nucleation in an ECR plasma and subsequent growth in a hot-filament system. The number density of diamond particles after the final growth step was greatly increased up to the order of 10 7-10 8 cm -2 when applying pretreatment (I) at the bias of 0 V corresponding to the ion-bombardment energy of around 10 eV. In this treatment, a clean and smooth surface with minimal damage was made by the dominance of anisotropic etching by hydrogen ions over isotropic etching by hydrogen atoms. The number density of diamond particles was still more increased when applying pretreatment (II), but the treated surface was unfavorably contaminated and roughened.
|ジャーナル||Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films|
|出版物ステータス||出版済み - 9 18 2006|
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films