Inactivation of the junction surfaces in SiGe/Si diodes

Fumihiko Hirose, Masashi Mukaida

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

抄録

We have studied the optimum junction surface treatment of SiGe/Si/Si pin diodes with the i-layer thickness of 20 μm by I-V measurements and X-ray photoelectron spectroscopy. The I-V measurements indicated that the HF-acid dipping followed by the H2SO4 and H2O 2 treatment has the best breakdown voltages exceeding 300V at the leakage current of 100 μA/cm2. In this treatment, the surface Ge is soluble in the H2SO2 and H2O2 treatment and only SiO2 remains on the surface. On the other hand, low temperature oxidation with UV ozone or D2 ambient resulted in lower breakdown voltages less than 200V, where Si and Ge oxides appear on the surface. The XPS studies suggest the surface GeO2 causes the leakage current in the junction surface.

本文言語英語
ホスト出版物のタイトルState-of-the-Art Program on Compound Semiconductors, SOTAPOCS XLII and Processes at the Compound Semiconductor/Solution Interface - Proceedings of the International Symposium
編集者P.C. Chang, K. Shiojima, D. Noel Buckley, S. Ahmed
ページ399-405
ページ数7
PV 2005-04
出版ステータス出版済み - 2005
外部発表はい
イベント207th ECS Meeting - Quebec, カナダ
継続期間: 5 16 20055 20 2005

その他

その他207th ECS Meeting
国/地域カナダ
CityQuebec
Period5/16/055/20/05

All Science Journal Classification (ASJC) codes

  • 工学(全般)

フィンガープリント

「Inactivation of the junction surfaces in SiGe/Si diodes」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル