InAs MOS-HEMT power detector for 1.0 THz on quartz glass

Eiji Kume, Hiroyuki Ishii, Hiroyuki Hattori, Wen Hsin Chang, Mutsuo Ogura, Haruichi Kanaya, Tanemasa Asano, Tatsuro Maeda

研究成果: 著書/レポートタイプへの貢献会議での発言

4 引用 (Scopus)

抄録

Terahertz wave was detected in 1.0 THz using InAs MOS-HEMT as a non-biased (cold) FET power detector at room temperature. Terahertz power detector was fabricated on quartz glass substrate by direct-wafer-bonding technique. 1.0 THz signal power was directly input to the gate terminal with drain coupling in MOS-HEMT detector through the GSG THz probe. The high responsivity of around 60 V/W was achieved at the bias voltage of -0.4 V.

元の言語英語
ホスト出版物のタイトル2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings
出版者Institute of Electrical and Electronics Engineers Inc.
ページ196-197
ページ数2
ISBN(電子版)9781509046591
DOI
出版物ステータス出版済み - 6 13 2017
イベント2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Toyama, 日本
継続期間: 2 28 20173 2 2017

出版物シリーズ

名前2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings

その他

その他2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017
日本
Toyama
期間2/28/173/2/17

Fingerprint

Quartz
High electron mobility transistors
Detectors
Glass
Terahertz waves
Wafer bonding
Bias voltage
Substrates
Power HEMT
Temperature
Power field effect transistors

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Electrical and Electronic Engineering

これを引用

Kume, E., Ishii, H., Hattori, H., Chang, W. H., Ogura, M., Kanaya, H., ... Maeda, T. (2017). InAs MOS-HEMT power detector for 1.0 THz on quartz glass. : 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings (pp. 196-197). [7947562] (2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDTM.2017.7947562

InAs MOS-HEMT power detector for 1.0 THz on quartz glass. / Kume, Eiji; Ishii, Hiroyuki; Hattori, Hiroyuki; Chang, Wen Hsin; Ogura, Mutsuo; Kanaya, Haruichi; Asano, Tanemasa; Maeda, Tatsuro.

2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2017. p. 196-197 7947562 (2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings).

研究成果: 著書/レポートタイプへの貢献会議での発言

Kume, E, Ishii, H, Hattori, H, Chang, WH, Ogura, M, Kanaya, H, Asano, T & Maeda, T 2017, InAs MOS-HEMT power detector for 1.0 THz on quartz glass. : 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings., 7947562, 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings, Institute of Electrical and Electronics Engineers Inc., pp. 196-197, 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017, Toyama, 日本, 2/28/17. https://doi.org/10.1109/EDTM.2017.7947562
Kume E, Ishii H, Hattori H, Chang WH, Ogura M, Kanaya H その他. InAs MOS-HEMT power detector for 1.0 THz on quartz glass. : 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2017. p. 196-197. 7947562. (2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings). https://doi.org/10.1109/EDTM.2017.7947562
Kume, Eiji ; Ishii, Hiroyuki ; Hattori, Hiroyuki ; Chang, Wen Hsin ; Ogura, Mutsuo ; Kanaya, Haruichi ; Asano, Tanemasa ; Maeda, Tatsuro. / InAs MOS-HEMT power detector for 1.0 THz on quartz glass. 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2017. pp. 196-197 (2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings).
@inproceedings{d01b20089cc94abebf6566532bd9747a,
title = "InAs MOS-HEMT power detector for 1.0 THz on quartz glass",
abstract = "Terahertz wave was detected in 1.0 THz using InAs MOS-HEMT as a non-biased (cold) FET power detector at room temperature. Terahertz power detector was fabricated on quartz glass substrate by direct-wafer-bonding technique. 1.0 THz signal power was directly input to the gate terminal with drain coupling in MOS-HEMT detector through the GSG THz probe. The high responsivity of around 60 V/W was achieved at the bias voltage of -0.4 V.",
author = "Eiji Kume and Hiroyuki Ishii and Hiroyuki Hattori and Chang, {Wen Hsin} and Mutsuo Ogura and Haruichi Kanaya and Tanemasa Asano and Tatsuro Maeda",
year = "2017",
month = "6",
day = "13",
doi = "10.1109/EDTM.2017.7947562",
language = "English",
series = "2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "196--197",
booktitle = "2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings",
address = "United States",

}

TY - GEN

T1 - InAs MOS-HEMT power detector for 1.0 THz on quartz glass

AU - Kume, Eiji

AU - Ishii, Hiroyuki

AU - Hattori, Hiroyuki

AU - Chang, Wen Hsin

AU - Ogura, Mutsuo

AU - Kanaya, Haruichi

AU - Asano, Tanemasa

AU - Maeda, Tatsuro

PY - 2017/6/13

Y1 - 2017/6/13

N2 - Terahertz wave was detected in 1.0 THz using InAs MOS-HEMT as a non-biased (cold) FET power detector at room temperature. Terahertz power detector was fabricated on quartz glass substrate by direct-wafer-bonding technique. 1.0 THz signal power was directly input to the gate terminal with drain coupling in MOS-HEMT detector through the GSG THz probe. The high responsivity of around 60 V/W was achieved at the bias voltage of -0.4 V.

AB - Terahertz wave was detected in 1.0 THz using InAs MOS-HEMT as a non-biased (cold) FET power detector at room temperature. Terahertz power detector was fabricated on quartz glass substrate by direct-wafer-bonding technique. 1.0 THz signal power was directly input to the gate terminal with drain coupling in MOS-HEMT detector through the GSG THz probe. The high responsivity of around 60 V/W was achieved at the bias voltage of -0.4 V.

UR - http://www.scopus.com/inward/record.url?scp=85021989684&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85021989684&partnerID=8YFLogxK

U2 - 10.1109/EDTM.2017.7947562

DO - 10.1109/EDTM.2017.7947562

M3 - Conference contribution

T3 - 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings

SP - 196

EP - 197

BT - 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

ER -