InAs MOS-HEMT power detector for 1.0 THz on quartz glass

Eiji Kume, Hiroyuki Ishii, Hiroyuki Hattori, Wen Hsin Chang, Mutsuo Ogura, Haruichi Kanaya, Tanemasa Asano, Tatsuro Maeda

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

4 引用 (Scopus)

抜粋

Terahertz wave was detected in 1.0 THz using InAs MOS-HEMT as a non-biased (cold) FET power detector at room temperature. Terahertz power detector was fabricated on quartz glass substrate by direct-wafer-bonding technique. 1.0 THz signal power was directly input to the gate terminal with drain coupling in MOS-HEMT detector through the GSG THz probe. The high responsivity of around 60 V/W was achieved at the bias voltage of -0.4 V.

元の言語英語
ホスト出版物のタイトル2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings
出版者Institute of Electrical and Electronics Engineers Inc.
ページ196-197
ページ数2
ISBN(電子版)9781509046591
DOI
出版物ステータス出版済み - 6 13 2017
イベント2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Toyama, 日本
継続期間: 2 28 20173 2 2017

出版物シリーズ

名前2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings

その他

その他2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017
日本
Toyama
期間2/28/173/2/17

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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  • これを引用

    Kume, E., Ishii, H., Hattori, H., Chang, W. H., Ogura, M., Kanaya, H., Asano, T., & Maeda, T. (2017). InAs MOS-HEMT power detector for 1.0 THz on quartz glass. : 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings (pp. 196-197). [7947562] (2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDTM.2017.7947562