Incorporation of higher-order silane radicals into A-SI:H films of high stability against light exposure

Masaharu Shiratani, Shinya Iwashita, Kouki Bando, Toshihisa Inoue, Kazunori Koga

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

2 被引用数 (Scopus)

抄録

We have studied effects of higher-order silane (HOS) radicals on stability of a-Si:H films against light exposure by using a multi-hollow discharge plasma CVD method. For the method, a short gas residence time of ms in the discharge regions suppresses growth of a-Si:H nano-particles (hereafter referred to as clusters) and gas viscous force drives clusters toward the downstream region. Therefore, we can deposit a-Si:H films without incorporating clusters in the upstream region and such films show high stability. The method is effective in suppressing cluster amount in the discharges, while the method has little effects on Si2H5 and Si3H7 densities there.

本文言語英語
ホスト出版物のタイトルConference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4
出版社IEEE Computer Society
ページ1596-1599
ページ数4
ISBN(印刷版)1424400163, 9781424400164
DOI
出版ステータス出版済み - 1 1 2006
イベント2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4 - Waikoloa, HI, 米国
継続期間: 5 7 20065 12 2006

出版物シリーズ

名前Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4
2

その他

その他2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4
国/地域米国
CityWaikoloa, HI
Period5/7/065/12/06

All Science Journal Classification (ASJC) codes

  • 再生可能エネルギー、持続可能性、環境
  • 電子工学および電気工学
  • 電子材料、光学材料、および磁性材料
  • 材料化学

フィンガープリント

「Incorporation of higher-order silane radicals into A-SI:H films of high stability against light exposure」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル