Increased doping depth of Al in wet-chemical laser doping of 4H-SiC by expanding laser pulse

Akihiro Ikeda, Daichi Marui, Rikuho Sumina, Hiroshi Ikenoue, Tanemasa Asano

研究成果: ジャーナルへの寄稿記事

5 引用 (Scopus)

抄録

Al is doped into 4H-SiC by irradiating pulsed KrF excimer laser to 4H-SiC immersed in AlCl3 aqueous solution. Impact on doping depth of the use of expanded laser-pulse width is investigated. Expanded laser pulse is produced by splitting and recombining the laser beam with mirrors. The laser pulse width was expanded from its original width of 55–100 ns, while the peak power of the expanded pulse is as half as that of the original pulse under the same laser fluence. Multiple shots of the expanded laser pulses increased the doping depth at the Al concentration of 1×1016 /cm3 to 100 nm from 30 nm of the single shot of the original short, high-peak power laser. The increased doping depth could be due to enhanced diffusion by extra vacancies generated by the repeated laser irradiations. Due to the smaller laser peak power, the expanded pulse laser can suppress damage generation under multiple laser shots and, as a result, leakage current of the pn junction diode is kept low.

元の言語英語
ページ(範囲)193-196
ページ数4
ジャーナルMaterials Science in Semiconductor Processing
70
DOI
出版物ステータス出版済み - 11 1 2017

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Chemical lasers
chemical lasers
Laser pulses
Doping (additives)
pulses
lasers
Lasers
shot
Excimer lasers
Laser beam effects
Pulsed lasers
pulse duration
Leakage currents
Vacancies
Laser beams
Diodes
junction diodes
excimer lasers
pulsed lasers
fluence

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

これを引用

Increased doping depth of Al in wet-chemical laser doping of 4H-SiC by expanding laser pulse. / Ikeda, Akihiro; Marui, Daichi; Sumina, Rikuho; Ikenoue, Hiroshi; Asano, Tanemasa.

:: Materials Science in Semiconductor Processing, 巻 70, 01.11.2017, p. 193-196.

研究成果: ジャーナルへの寄稿記事

Ikeda, Akihiro ; Marui, Daichi ; Sumina, Rikuho ; Ikenoue, Hiroshi ; Asano, Tanemasa. / Increased doping depth of Al in wet-chemical laser doping of 4H-SiC by expanding laser pulse. :: Materials Science in Semiconductor Processing. 2017 ; 巻 70. pp. 193-196.
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abstract = "Al is doped into 4H-SiC by irradiating pulsed KrF excimer laser to 4H-SiC immersed in AlCl3 aqueous solution. Impact on doping depth of the use of expanded laser-pulse width is investigated. Expanded laser pulse is produced by splitting and recombining the laser beam with mirrors. The laser pulse width was expanded from its original width of 55–100 ns, while the peak power of the expanded pulse is as half as that of the original pulse under the same laser fluence. Multiple shots of the expanded laser pulses increased the doping depth at the Al concentration of 1×1016 /cm3 to 100 nm from 30 nm of the single shot of the original short, high-peak power laser. The increased doping depth could be due to enhanced diffusion by extra vacancies generated by the repeated laser irradiations. Due to the smaller laser peak power, the expanded pulse laser can suppress damage generation under multiple laser shots and, as a result, leakage current of the pn junction diode is kept low.",
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AU - Ikenoue, Hiroshi

AU - Asano, Tanemasa

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N2 - Al is doped into 4H-SiC by irradiating pulsed KrF excimer laser to 4H-SiC immersed in AlCl3 aqueous solution. Impact on doping depth of the use of expanded laser-pulse width is investigated. Expanded laser pulse is produced by splitting and recombining the laser beam with mirrors. The laser pulse width was expanded from its original width of 55–100 ns, while the peak power of the expanded pulse is as half as that of the original pulse under the same laser fluence. Multiple shots of the expanded laser pulses increased the doping depth at the Al concentration of 1×1016 /cm3 to 100 nm from 30 nm of the single shot of the original short, high-peak power laser. The increased doping depth could be due to enhanced diffusion by extra vacancies generated by the repeated laser irradiations. Due to the smaller laser peak power, the expanded pulse laser can suppress damage generation under multiple laser shots and, as a result, leakage current of the pn junction diode is kept low.

AB - Al is doped into 4H-SiC by irradiating pulsed KrF excimer laser to 4H-SiC immersed in AlCl3 aqueous solution. Impact on doping depth of the use of expanded laser-pulse width is investigated. Expanded laser pulse is produced by splitting and recombining the laser beam with mirrors. The laser pulse width was expanded from its original width of 55–100 ns, while the peak power of the expanded pulse is as half as that of the original pulse under the same laser fluence. Multiple shots of the expanded laser pulses increased the doping depth at the Al concentration of 1×1016 /cm3 to 100 nm from 30 nm of the single shot of the original short, high-peak power laser. The increased doping depth could be due to enhanced diffusion by extra vacancies generated by the repeated laser irradiations. Due to the smaller laser peak power, the expanded pulse laser can suppress damage generation under multiple laser shots and, as a result, leakage current of the pn junction diode is kept low.

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