Increasing laser-doping depth of al in 4H-SiC by using expanded-pulse excimer laser

Akihiro Ikeda, Takashi Shimokawa, Hiroshi Ikenoue, Tanemasa Asano

研究成果: 書籍/レポート タイプへの寄稿会議への寄与

抄録

Al doping into 4H-SiC performed by irradiating pulse-width-expanded excimer laser to an Al film deposited on the 4H-SiC surface is investigated. An optical pulse stretcher was constructed to produce the laser pulse whose peak intensity was reduced as half as that of the original pulse and pulse width was expanded from 55 ns to 100 ns. The irradiation of the expanded pulses is found to reduce the ablation of the materials from the surface and enable irradiation of multiple shots. As a result, Al doping depth is significantly increased. The multiple shots of the expanded pulses are also found to decrease the sensitivity to spatial non-uniformity of laser intensity and increase the uniformity of doped region.

本文言語英語
ホスト出版物のタイトルSilicon Carbide and Related Materials, 2018
編集者Peter M. Gammon, Vishal A. Shah, Richard A. McMahon, Michael R. Jennings, Oliver Vavasour, Philip A. Mawby, Faye Padfield
出版社Trans Tech Publications Ltd
ページ412-415
ページ数4
ISBN(印刷版)9783035713329
DOI
出版ステータス出版済み - 2019
イベント12th European Conference on Silicon Carbide and Related Materials, ECSCRM 2018 - Birmingham, 英国
継続期間: 9月 2 20189月 6 2018

出版物シリーズ

名前Materials Science Forum
963 MSF
ISSN(印刷版)0255-5476
ISSN(電子版)1662-9752

会議

会議12th European Conference on Silicon Carbide and Related Materials, ECSCRM 2018
国/地域英国
CityBirmingham
Period9/2/189/6/18

!!!All Science Journal Classification (ASJC) codes

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学

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