Independent control of ion energy and flux in plasma-enhanced diamond growth

研究成果: Contribution to journalArticle査読

15 被引用数 (Scopus)

抄録

Ion energy and flux incident upon a positively biased substrate in an inductively coupled plasma (ICP) have been analyzed during diamond growth at a pressure of 20 mTorr. An electrically floated characteristic of the ICP source allowed a shift up of the plasma potential by the biasing. For the substrate bias (Vb) above 20 V, the ion energy remained constant, while the ion flux was shown to decrease with increasing Vb. The diamond film grown with a high ion flux was composed of well-coalesced large scale islands as compared to that with a low ion flux. The results provide a way to control ion energy and flux independently and its advantage for ion-assisted diamond growth.

本文言語英語
ページ(範囲)4067-4069
ページ数3
ジャーナルApplied Physics Letters
74
26
DOI
出版ステータス出版済み - 6 28 1999
外部発表はい

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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