抄録
We present a study of a resist ashing using O2 inductively coupled plasma (ICP) at low pressure (<10 Pa). An ashing rate of 1.5 μm was obtained at 0.6 Pa by direct exposure to the plasma. However, a serious charge-up damage appeared owing to the radiation of a large amount of charged particles. On the contrary, a structure modification to restrict the charged particles could suppress the serious charge-up damage. The ashing rate dropped to below 20% of that directly exposed to the plasma. These ashing rates were proportional to the O* spectrum intensity directly above the substrate, which was strongly dependent on the pressure. The amount of the exited particles supplied to the substrate depended on the phenomena as a function of the pressure, such as a mean free path, a plasma distribution, etc. In this paper, the alternative magnetic field measurement in the plasma indicates the energy absorption decrease to the plasma at high pressure, which is an important factor of the ICP production for processing.
| 元の言語 | 英語 |
|---|---|
| ページ（範囲） | 160-164 |
| ページ数 | 5 |
| ジャーナル | Thin Solid Films |
| 巻 | 386 |
| 発行部数 | 2 |
| DOI | |
| 出版物ステータス | 出版済み - 5 15 2001 |
| イベント | 12th Symposium on Plasma Science for Materials - Tokyo, 日本 継続期間: 6 16 2001 → 6 17 2001 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry
これを引用
Inductively coupled plasma application to the resist ashing. / Takagi, Ken ichi; Ikeda, Akihiro; Fujimura, Tsuyoshi; Kuroki, Yukinori.
：: Thin Solid Films, 巻 386, 番号 2, 15.05.2001, p. 160-164.研究成果: ジャーナルへの寄稿 › Conference article
}
TY - JOUR
T1 - Inductively coupled plasma application to the resist ashing
AU - Takagi, Ken ichi
AU - Ikeda, Akihiro
AU - Fujimura, Tsuyoshi
AU - Kuroki, Yukinori
PY - 2001/5/15
Y1 - 2001/5/15
N2 - We present a study of a resist ashing using O2 inductively coupled plasma (ICP) at low pressure (<10 Pa). An ashing rate of 1.5 μm was obtained at 0.6 Pa by direct exposure to the plasma. However, a serious charge-up damage appeared owing to the radiation of a large amount of charged particles. On the contrary, a structure modification to restrict the charged particles could suppress the serious charge-up damage. The ashing rate dropped to below 20% of that directly exposed to the plasma. These ashing rates were proportional to the O* spectrum intensity directly above the substrate, which was strongly dependent on the pressure. The amount of the exited particles supplied to the substrate depended on the phenomena as a function of the pressure, such as a mean free path, a plasma distribution, etc. In this paper, the alternative magnetic field measurement in the plasma indicates the energy absorption decrease to the plasma at high pressure, which is an important factor of the ICP production for processing.
AB - We present a study of a resist ashing using O2 inductively coupled plasma (ICP) at low pressure (<10 Pa). An ashing rate of 1.5 μm was obtained at 0.6 Pa by direct exposure to the plasma. However, a serious charge-up damage appeared owing to the radiation of a large amount of charged particles. On the contrary, a structure modification to restrict the charged particles could suppress the serious charge-up damage. The ashing rate dropped to below 20% of that directly exposed to the plasma. These ashing rates were proportional to the O* spectrum intensity directly above the substrate, which was strongly dependent on the pressure. The amount of the exited particles supplied to the substrate depended on the phenomena as a function of the pressure, such as a mean free path, a plasma distribution, etc. In this paper, the alternative magnetic field measurement in the plasma indicates the energy absorption decrease to the plasma at high pressure, which is an important factor of the ICP production for processing.
UR - http://www.scopus.com/inward/record.url?scp=0035874093&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0035874093&partnerID=8YFLogxK
U2 - 10.1016/S0040-6090(00)01636-9
DO - 10.1016/S0040-6090(00)01636-9
M3 - Conference article
AN - SCOPUS:0035874093
VL - 386
SP - 160
EP - 164
JO - Thin Solid Films
JF - Thin Solid Films
SN - 0040-6090
IS - 2
ER -