Inductively coupled plasma application to the resist ashing

Ken ichi Takagi, Akihiro Ikeda, Tsuyoshi Fujimura, Yukinori Kuroki

研究成果: ジャーナルへの寄稿会議記事査読

10 被引用数 (Scopus)

抄録

We present a study of a resist ashing using O2 inductively coupled plasma (ICP) at low pressure (<10 Pa). An ashing rate of 1.5 μm was obtained at 0.6 Pa by direct exposure to the plasma. However, a serious charge-up damage appeared owing to the radiation of a large amount of charged particles. On the contrary, a structure modification to restrict the charged particles could suppress the serious charge-up damage. The ashing rate dropped to below 20% of that directly exposed to the plasma. These ashing rates were proportional to the O* spectrum intensity directly above the substrate, which was strongly dependent on the pressure. The amount of the exited particles supplied to the substrate depended on the phenomena as a function of the pressure, such as a mean free path, a plasma distribution, etc. In this paper, the alternative magnetic field measurement in the plasma indicates the energy absorption decrease to the plasma at high pressure, which is an important factor of the ICP production for processing.

本文言語英語
ページ(範囲)160-164
ページ数5
ジャーナルThin Solid Films
386
2
DOI
出版ステータス出版済み - 5月 15 2001
イベント12th Symposium on Plasma Science for Materials - Tokyo, 日本
継続期間: 6月 16 20016月 17 2001

!!!All Science Journal Classification (ASJC) codes

  • 電子材料、光学材料、および磁性材料
  • 表面および界面
  • 表面、皮膜および薄膜
  • 金属および合金
  • 材料化学

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