Inductively coupled plasma application to the resist ashing

Ken ichi Takagi, Akihiro Ikeda, Tsuyoshi Fujimura, Yukinori Kuroki

研究成果: ジャーナルへの寄稿Conference article

7 引用 (Scopus)

抄録

We present a study of a resist ashing using O2 inductively coupled plasma (ICP) at low pressure (<10 Pa). An ashing rate of 1.5 μm was obtained at 0.6 Pa by direct exposure to the plasma. However, a serious charge-up damage appeared owing to the radiation of a large amount of charged particles. On the contrary, a structure modification to restrict the charged particles could suppress the serious charge-up damage. The ashing rate dropped to below 20% of that directly exposed to the plasma. These ashing rates were proportional to the O* spectrum intensity directly above the substrate, which was strongly dependent on the pressure. The amount of the exited particles supplied to the substrate depended on the phenomena as a function of the pressure, such as a mean free path, a plasma distribution, etc. In this paper, the alternative magnetic field measurement in the plasma indicates the energy absorption decrease to the plasma at high pressure, which is an important factor of the ICP production for processing.

元の言語英語
ページ(範囲)160-164
ページ数5
ジャーナルThin Solid Films
386
発行部数2
DOI
出版物ステータス出版済み - 5 15 2001
イベント12th Symposium on Plasma Science for Materials - Tokyo, 日本
継続期間: 6 16 20016 17 2001

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Plasma applications
Inductively coupled plasma
Plasmas
Charged particles
Magnetic field measurement
Plasma sources
charged particles
Energy absorption
Substrates
damage
energy absorption
mean free path
Radiation
low pressure
Processing
radiation
magnetic fields

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

これを引用

Takagi, K. I., Ikeda, A., Fujimura, T., & Kuroki, Y. (2001). Inductively coupled plasma application to the resist ashing. Thin Solid Films, 386(2), 160-164. https://doi.org/10.1016/S0040-6090(00)01636-9

Inductively coupled plasma application to the resist ashing. / Takagi, Ken ichi; Ikeda, Akihiro; Fujimura, Tsuyoshi; Kuroki, Yukinori.

:: Thin Solid Films, 巻 386, 番号 2, 15.05.2001, p. 160-164.

研究成果: ジャーナルへの寄稿Conference article

Takagi, KI, Ikeda, A, Fujimura, T & Kuroki, Y 2001, 'Inductively coupled plasma application to the resist ashing', Thin Solid Films, 巻. 386, 番号 2, pp. 160-164. https://doi.org/10.1016/S0040-6090(00)01636-9
Takagi, Ken ichi ; Ikeda, Akihiro ; Fujimura, Tsuyoshi ; Kuroki, Yukinori. / Inductively coupled plasma application to the resist ashing. :: Thin Solid Films. 2001 ; 巻 386, 番号 2. pp. 160-164.
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N2 - We present a study of a resist ashing using O2 inductively coupled plasma (ICP) at low pressure (<10 Pa). An ashing rate of 1.5 μm was obtained at 0.6 Pa by direct exposure to the plasma. However, a serious charge-up damage appeared owing to the radiation of a large amount of charged particles. On the contrary, a structure modification to restrict the charged particles could suppress the serious charge-up damage. The ashing rate dropped to below 20% of that directly exposed to the plasma. These ashing rates were proportional to the O* spectrum intensity directly above the substrate, which was strongly dependent on the pressure. The amount of the exited particles supplied to the substrate depended on the phenomena as a function of the pressure, such as a mean free path, a plasma distribution, etc. In this paper, the alternative magnetic field measurement in the plasma indicates the energy absorption decrease to the plasma at high pressure, which is an important factor of the ICP production for processing.

AB - We present a study of a resist ashing using O2 inductively coupled plasma (ICP) at low pressure (<10 Pa). An ashing rate of 1.5 μm was obtained at 0.6 Pa by direct exposure to the plasma. However, a serious charge-up damage appeared owing to the radiation of a large amount of charged particles. On the contrary, a structure modification to restrict the charged particles could suppress the serious charge-up damage. The ashing rate dropped to below 20% of that directly exposed to the plasma. These ashing rates were proportional to the O* spectrum intensity directly above the substrate, which was strongly dependent on the pressure. The amount of the exited particles supplied to the substrate depended on the phenomena as a function of the pressure, such as a mean free path, a plasma distribution, etc. In this paper, the alternative magnetic field measurement in the plasma indicates the energy absorption decrease to the plasma at high pressure, which is an important factor of the ICP production for processing.

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