Influence of carrier lifetime control process in superjunction MOSFET characteristics

Wataru Saito, Syotaro Ono, Hiroaki Yamashita

研究成果: 書籍/レポート タイプへの寄稿会議への寄与

26 被引用数 (Scopus)

抄録

This paper reports device characteristics of superjunction (SJ) MOSFETs employed with platinum (Pt) doping or electron irradiation processes for high speed recovery operation of the internal body diode. For the inverter application, high speed recovery operation of the internal body diode is necessary. 600 V-class SJ-MOSFETs were fabricated with a lifetime control process. In this paper, the influence of the carrier lifetime control process upon the on-resistance, leakage current and withstanding capability are reported. The lifetime control process modulates the static characteristics, and it is difficult to obtain the high speed operation with trr < 100 ns maintaining both low on-resistance and low leakage current. However, the withstanding capability is not problematic due to suppressing the carrier concentration by the short lifetime.

本文言語英語
ホスト出版物のタイトルProceedings of the 26th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2014
出版社Institute of Electrical and Electronics Engineers Inc.
ページ87-90
ページ数4
ISBN(印刷版)9781479929177
DOI
出版ステータス出版済み - 1月 1 2014
外部発表はい
イベント26th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2014 - Waikoloa, HI, 米国
継続期間: 6月 15 20146月 19 2014

出版物シリーズ

名前Proceedings of the International Symposium on Power Semiconductor Devices and ICs
ISSN(印刷版)1063-6854

その他

その他26th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2014
国/地域米国
CityWaikoloa, HI
Period6/15/146/19/14

!!!All Science Journal Classification (ASJC) codes

  • 工学(全般)

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