TY - GEN
T1 - Influence of electric field upon current collapse phenomena and reliability in high voltage GaN-HEMTs
AU - Saito, Wataru
AU - Nitta, Tomohiro
AU - Kakiuchi, Yorito
AU - Saito, Yasunobu
AU - Noda, Takao
AU - Fujimoto, Hidetoshi
AU - Yoshioka, Akira
AU - Ohno, Tetsuya
PY - 2010/9/20
Y1 - 2010/9/20
N2 - This paper reports that the maximum electric field is a dominant factor for current collapse phenomena and reliability in high-voltage GaN-HEMTs. The relation between the dynamic on-resistance increase caused by the collapse phenomena and the maximum electric field peak showed universality, which was independent from the field plate (FP) structure and the wafer. The gate-edge electric field strongly affects the increase of the dynamic on-resistance. After the continuous switching test for 7 hours, the change of the dynamic on-resistance also depended on the maximum electric field. The optimal FP structure minimized the increase of the dynamic on-resistance and realized high reliability due to minimization of the electric field peaks.
AB - This paper reports that the maximum electric field is a dominant factor for current collapse phenomena and reliability in high-voltage GaN-HEMTs. The relation between the dynamic on-resistance increase caused by the collapse phenomena and the maximum electric field peak showed universality, which was independent from the field plate (FP) structure and the wafer. The gate-edge electric field strongly affects the increase of the dynamic on-resistance. After the continuous switching test for 7 hours, the change of the dynamic on-resistance also depended on the maximum electric field. The optimal FP structure minimized the increase of the dynamic on-resistance and realized high reliability due to minimization of the electric field peaks.
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M3 - Conference contribution
AN - SCOPUS:77956581241
SN - 9781424477180
T3 - Proceedings of the International Symposium on Power Semiconductor Devices and ICs
SP - 339
EP - 342
BT - 2010 22nd International Symposium on Power Semiconductor Devices and IC's, ISPSD 2010
T2 - 2010 22nd International Symposium on Power Semiconductor Devices and IC's, ISPSD 2010
Y2 - 6 June 2010 through 10 June 2010
ER -