Influence of ferromagnetic electrodes on the resistive switching device based on NiO

K. Okabe, M. Kawakita, S. Yakata, Takashi Kimura

研究成果: 書籍/レポート タイプへの寄稿会議への寄与

抄録

Metal-insulator transition (MIT) induced by the electric field has been intensively investigated owing to its potential for nano-sized resistance switching devices in the next generation as well as its simple device structure. Although the MIT has been reported in various oxides such as Mn oxide1), Gd oxide2), and Co-doped Ti oxide3), the microscopic origin of the phase transition is still controversial issue. It should be noted that some of the oxides showing the MIT include magnetic components, implying that the MIT is related to the transition of the spin state. To explore the correlation between the MIT and spin configuration, in the present study, we investigate the influence of the ferromagnetic electrode on the MIT.

本文言語英語
ホスト出版物のタイトル2015 IEEE International Magnetics Conference, INTERMAG 2015
出版社Institute of Electrical and Electronics Engineers Inc.
ISBN(電子版)9781479973224
DOI
出版ステータス出版済み - 7月 14 2015
イベント2015 IEEE International Magnetics Conference, INTERMAG 2015 - Beijing, 中国
継続期間: 5月 11 20155月 15 2015

出版物シリーズ

名前2015 IEEE International Magnetics Conference, INTERMAG 2015

その他

その他2015 IEEE International Magnetics Conference, INTERMAG 2015
国/地域中国
CityBeijing
Period5/11/155/15/15

!!!All Science Journal Classification (ASJC) codes

  • 表面、皮膜および薄膜
  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学

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