Influence of freely diffusing excitons on the photoluminescence spectrum of Si thick films with depth distribution of strain

Dong Wang, Haigui Yang, Tokuhide Kitamura, Hiroshi Nakashima

研究成果: ジャーナルへの寄稿記事

2 引用 (Scopus)

抄録

We present an interpretation of photoluminescence (PL) for relatively thick Si films (200-300 nm) with depth distribution of strain, in which freely diffusing excitons influence the PL signal that originates from layers with different strain conditions. Micro-PL was excited by a 325 nm laser at 8.5 K for the Si films. The PL spectra clearly depended on the thickness of the strained part (ts) in the strained Si film. Under the condition of t s greater than the penetration depth (dp) of 325 nm line for Si, only the strained-part-related PL(PLs) could be observed but not the unstrained-part-related PL(PLus). With a decrease in t s, PLus gradually appeared and became strong, and simultaneously PLs became weak. For positions with very small t s, PLs could never be observed. The strain completion for the Si films was also investigated based on exciton behaviors in strained semiconductor. These characteristics of PL are useful references for understanding exciton behavior in semiconductor with depth distribution of band gap.

元の言語英語
記事番号033511
ジャーナルJournal of Applied Physics
107
発行部数3
DOI
出版物ステータス出版済み - 2 24 2010

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thick films
excitons
photoluminescence
penetration
lasers

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

これを引用

Influence of freely diffusing excitons on the photoluminescence spectrum of Si thick films with depth distribution of strain. / Wang, Dong; Yang, Haigui; Kitamura, Tokuhide; Nakashima, Hiroshi.

:: Journal of Applied Physics, 巻 107, 番号 3, 033511, 24.02.2010.

研究成果: ジャーナルへの寄稿記事

@article{db26c6756acf43d7a2ebbb633c1ff9c6,
title = "Influence of freely diffusing excitons on the photoluminescence spectrum of Si thick films with depth distribution of strain",
abstract = "We present an interpretation of photoluminescence (PL) for relatively thick Si films (200-300 nm) with depth distribution of strain, in which freely diffusing excitons influence the PL signal that originates from layers with different strain conditions. Micro-PL was excited by a 325 nm laser at 8.5 K for the Si films. The PL spectra clearly depended on the thickness of the strained part (ts) in the strained Si film. Under the condition of t s greater than the penetration depth (dp) of 325 nm line for Si, only the strained-part-related PL(PLs) could be observed but not the unstrained-part-related PL(PLus). With a decrease in t s, PLus gradually appeared and became strong, and simultaneously PLs became weak. For positions with very small t s, PLs could never be observed. The strain completion for the Si films was also investigated based on exciton behaviors in strained semiconductor. These characteristics of PL are useful references for understanding exciton behavior in semiconductor with depth distribution of band gap.",
author = "Dong Wang and Haigui Yang and Tokuhide Kitamura and Hiroshi Nakashima",
year = "2010",
month = "2",
day = "24",
doi = "10.1063/1.3305463",
language = "English",
volume = "107",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "3",

}

TY - JOUR

T1 - Influence of freely diffusing excitons on the photoluminescence spectrum of Si thick films with depth distribution of strain

AU - Wang, Dong

AU - Yang, Haigui

AU - Kitamura, Tokuhide

AU - Nakashima, Hiroshi

PY - 2010/2/24

Y1 - 2010/2/24

N2 - We present an interpretation of photoluminescence (PL) for relatively thick Si films (200-300 nm) with depth distribution of strain, in which freely diffusing excitons influence the PL signal that originates from layers with different strain conditions. Micro-PL was excited by a 325 nm laser at 8.5 K for the Si films. The PL spectra clearly depended on the thickness of the strained part (ts) in the strained Si film. Under the condition of t s greater than the penetration depth (dp) of 325 nm line for Si, only the strained-part-related PL(PLs) could be observed but not the unstrained-part-related PL(PLus). With a decrease in t s, PLus gradually appeared and became strong, and simultaneously PLs became weak. For positions with very small t s, PLs could never be observed. The strain completion for the Si films was also investigated based on exciton behaviors in strained semiconductor. These characteristics of PL are useful references for understanding exciton behavior in semiconductor with depth distribution of band gap.

AB - We present an interpretation of photoluminescence (PL) for relatively thick Si films (200-300 nm) with depth distribution of strain, in which freely diffusing excitons influence the PL signal that originates from layers with different strain conditions. Micro-PL was excited by a 325 nm laser at 8.5 K for the Si films. The PL spectra clearly depended on the thickness of the strained part (ts) in the strained Si film. Under the condition of t s greater than the penetration depth (dp) of 325 nm line for Si, only the strained-part-related PL(PLs) could be observed but not the unstrained-part-related PL(PLus). With a decrease in t s, PLus gradually appeared and became strong, and simultaneously PLs became weak. For positions with very small t s, PLs could never be observed. The strain completion for the Si films was also investigated based on exciton behaviors in strained semiconductor. These characteristics of PL are useful references for understanding exciton behavior in semiconductor with depth distribution of band gap.

UR - http://www.scopus.com/inward/record.url?scp=76949102646&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=76949102646&partnerID=8YFLogxK

U2 - 10.1063/1.3305463

DO - 10.1063/1.3305463

M3 - Article

AN - SCOPUS:76949102646

VL - 107

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 3

M1 - 033511

ER -