Influence of hole accumulation on source resistance, kink effect and on-state breakdown of InP-based high electron mobility transistors: Light irradiation study

Tetsuya Suemitsu, Hiroshi Fushimi, Satoshi Kodama, Satoshi Tsunashima, Shunji Kimura

研究成果: Contribution to journalArticle

7 引用 (Scopus)

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The influence of impact-ionized holes accumulating in the device was studied for InP-based InAlAs/InGaAs HEMTs using light irradiation experiments. Two parasitic phenomena arise from the generation of electron-hole pairs and subsequent accumulation of holes in the body of the device: The hole accumulation in the source region causes the decrease in the source resistance, which eliminates the kink effect. The hole accumulation in the gate region shifts the threshold voltage. This could be a positive feedback that increases the drain current at the on-state breakdown of the device.

元の言語英語
ページ(範囲)1104-1107
ページ数4
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
41
発行部数2 B
DOI
出版物ステータス出版済み - 2 2002
外部発表Yes

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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