Influence of hole accumulation on the source resistance, kink effect, and on-state breakdown of InP-based HEMTs: Light irradiation study

T. Suemitsu, H. Fushimi, S. Kodama, S. Tsunashima, S. Kimura

研究成果: Contribution to conferencePaper査読

6 被引用数 (Scopus)

抄録

The influence of impact-ionized holes accumulating in the device was studied for InP-based InAlAs/InGaAs HEMTs using light irradiation experiments. Two parasitic phenomena arise from the generation of electron-hole pairs and subsequent accumulation of holes in the body of the device: The hole accumulation in the source region causes the decrease in the source resistance, which eliminates the kink effect. The hole accumulation in the gate region shifts the threshold voltage. This could be a positive feedback that increases the drain current at the on-state breakdown of the device.

本文言語英語
ページ456-459
ページ数4
出版ステータス出版済み - 1 1 2001
外部発表はい
イベント2001 International Conference on Indium Phosphide and Related Materials - Nara, 日本
継続期間: 5 14 20015 18 2001

その他

その他2001 International Conference on Indium Phosphide and Related Materials
国/地域日本
CityNara
Period5/14/015/18/01

All Science Journal Classification (ASJC) codes

  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学

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