Thermodynamic analyses incorporating the contribution of lattice constraint from the substrates were carried out to understand the relationship between input In mole ratio and solid composition of stress-free InGaN, InGaN on GaN and InGaN on InN during metalorganic vapour phase epitaxy. The calculated results suggest that a compositionally unstable region is found at the InN-rich region for InGaN on GaN at high temperatures, while that for InGaN on InN can be seen at the GaN-rich region due to the lattice constraint from the substrate. These results imply that incorporating the contribution of lattice constraint is indispensable to predict the thermodynamic properties of such materials.
|ジャーナル||Physica Status Solidi C: Conferences|
|出版ステータス||出版済み - 2003|
|イベント||5th International Conference on Nitride Semiconductors, ICNS 2003 - Nara, 日本|
継続期間: 5 25 2003 → 5 30 2003
All Science Journal Classification (ASJC) codes