Influence of lattice constraint from InN and GaN substrate on relationship between input mole ratio and solid composition of InGaN during MOVPE

Y. Kangawa, T. Ito, Y. Kumagai, A. Koukitu

研究成果: Contribution to journalConference article査読

4 被引用数 (Scopus)

抄録

Thermodynamic analyses incorporating the contribution of lattice constraint from the substrates were carried out to understand the relationship between input In mole ratio and solid composition of stress-free InGaN, InGaN on GaN and InGaN on InN during metalorganic vapour phase epitaxy. The calculated results suggest that a compositionally unstable region is found at the InN-rich region for InGaN on GaN at high temperatures, while that for InGaN on InN can be seen at the GaN-rich region due to the lattice constraint from the substrate. These results imply that incorporating the contribution of lattice constraint is indispensable to predict the thermodynamic properties of such materials.

本文言語英語
ページ(範囲)2575-2579
ページ数5
ジャーナルPhysica Status Solidi C: Conferences
7
DOI
出版ステータス出版済み - 2003
外部発表はい
イベント5th International Conference on Nitride Semiconductors, ICNS 2003 - Nara, 日本
継続期間: 5 25 20035 30 2003

All Science Journal Classification (ASJC) codes

  • 凝縮系物理学

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