Influence of lattice constraint from InN and GaN substrate on relationship between solid composition of InxGa1-xN film and input mole ratio during molecular beam epitaxy

Yoshihiro Kangawa, Tomonori Ito, Yoshinao Kumagai, Akinori Koukitu, Norihito Kawaguchi

研究成果: Contribution to journalLetter査読

8 被引用数 (Scopus)

抄録

Thermodynamic analyses were carried out to understand the influence of lattice constraint from InN and GaN substrates on the relationship between solid composition x of InxGa1-xN films and input mole ratio RIn (= PIn0/(PIn0 + PGa0), where Pi0 is the input partial pressure of element i) during molecular beam epitaxy. The calculation results suggest that a compositionally unstable region is found at the GaN-rich region for InGaN on InN at higher temperatures while that for InGaN on GaN can be seen at the InN-rich region. This is because the maximum enthalpy of mixing shifts toward x ∼ 0.10 for InGaN on InN and toward x ∼ 0.80 for InGaN on GaN compared with x ∼ 0.50 for stress-free InGaN.

本文言語英語
ページ(範囲)L95-L98
ジャーナルJapanese Journal of Applied Physics, Part 2: Letters
42
2 A
DOI
出版ステータス出版済み - 2 1 2003
外部発表はい

All Science Journal Classification (ASJC) codes

  • 工学(全般)
  • 物理学および天文学(その他)
  • 物理学および天文学(全般)

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