Influence of lattice constraint from InN and GaN substrate on relationship between solid composition of InxGa1-xN film and input mole ratio during molecular beam epitaxy

Yoshihiro Kangawa, Tomonori Ito, Yoshinao Kumagai, Akinori Koukitu, Norihito Kawaguchi

研究成果: ジャーナルへの寄稿レター

8 引用 (Scopus)

抄録

Thermodynamic analyses were carried out to understand the influence of lattice constraint from InN and GaN substrates on the relationship between solid composition x of InxGa1-xN films and input mole ratio RIn (= PIn 0/(PIn 0 + PGa 0), where Pi 0 is the input partial pressure of element i) during molecular beam epitaxy. The calculation results suggest that a compositionally unstable region is found at the GaN-rich region for InGaN on InN at higher temperatures while that for InGaN on GaN can be seen at the InN-rich region. This is because the maximum enthalpy of mixing shifts toward x ∼ 0.10 for InGaN on InN and toward x ∼ 0.80 for InGaN on GaN compared with x ∼ 0.50 for stress-free InGaN.

元の言語英語
ジャーナルJapanese Journal of Applied Physics, Part 2: Letters
42
発行部数2 A
DOI
出版物ステータス出版済み - 2 1 2003
外部発表Yes

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Molecular beam epitaxy
Partial pressure
Enthalpy
molecular beam epitaxy
Thermodynamics
Substrates
Chemical analysis
partial pressure
enthalpy
Temperature
thermodynamics
shift

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

これを引用

Influence of lattice constraint from InN and GaN substrate on relationship between solid composition of InxGa1-xN film and input mole ratio during molecular beam epitaxy. / Kangawa, Yoshihiro; Ito, Tomonori; Kumagai, Yoshinao; Koukitu, Akinori; Kawaguchi, Norihito.

:: Japanese Journal of Applied Physics, Part 2: Letters, 巻 42, 番号 2 A, 01.02.2003.

研究成果: ジャーナルへの寄稿レター

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abstract = "Thermodynamic analyses were carried out to understand the influence of lattice constraint from InN and GaN substrates on the relationship between solid composition x of InxGa1-xN films and input mole ratio RIn (= PIn 0/(PIn 0 + PGa 0), where Pi 0 is the input partial pressure of element i) during molecular beam epitaxy. The calculation results suggest that a compositionally unstable region is found at the GaN-rich region for InGaN on InN at higher temperatures while that for InGaN on GaN can be seen at the InN-rich region. This is because the maximum enthalpy of mixing shifts toward x ∼ 0.10 for InGaN on InN and toward x ∼ 0.80 for InGaN on GaN compared with x ∼ 0.50 for stress-free InGaN.",
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T1 - Influence of lattice constraint from InN and GaN substrate on relationship between solid composition of InxGa1-xN film and input mole ratio during molecular beam epitaxy

AU - Kangawa, Yoshihiro

AU - Ito, Tomonori

AU - Kumagai, Yoshinao

AU - Koukitu, Akinori

AU - Kawaguchi, Norihito

PY - 2003/2/1

Y1 - 2003/2/1

N2 - Thermodynamic analyses were carried out to understand the influence of lattice constraint from InN and GaN substrates on the relationship between solid composition x of InxGa1-xN films and input mole ratio RIn (= PIn 0/(PIn 0 + PGa 0), where Pi 0 is the input partial pressure of element i) during molecular beam epitaxy. The calculation results suggest that a compositionally unstable region is found at the GaN-rich region for InGaN on InN at higher temperatures while that for InGaN on GaN can be seen at the InN-rich region. This is because the maximum enthalpy of mixing shifts toward x ∼ 0.10 for InGaN on InN and toward x ∼ 0.80 for InGaN on GaN compared with x ∼ 0.50 for stress-free InGaN.

AB - Thermodynamic analyses were carried out to understand the influence of lattice constraint from InN and GaN substrates on the relationship between solid composition x of InxGa1-xN films and input mole ratio RIn (= PIn 0/(PIn 0 + PGa 0), where Pi 0 is the input partial pressure of element i) during molecular beam epitaxy. The calculation results suggest that a compositionally unstable region is found at the GaN-rich region for InGaN on InN at higher temperatures while that for InGaN on GaN can be seen at the InN-rich region. This is because the maximum enthalpy of mixing shifts toward x ∼ 0.10 for InGaN on InN and toward x ∼ 0.80 for InGaN on GaN compared with x ∼ 0.50 for stress-free InGaN.

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