Influence of reaction between silica crucible and graphite susceptor on impurities of multicrystalline silicon in a unidirectional solidification furnace

B. Gao, S. Nakano, K. Kakimoto

研究成果: Contribution to journalArticle査読

27 被引用数 (Scopus)

抄録

The influence of silica crucible reaction with graphite susceptor on carbon and oxygen impurities in multicrystalline silicon was studied by global numerical simulations. Results showed that the crucible reaction has a marked effect on carbon and oxygen impurities in the crystal. When the activity of carbon on the surface of the graphite susceptor increases, both oxygen and carbon impurities in the melt increase rapidly. Therefore, the production of high-purity multicrystalline silicon requires setting a free space between the silica crucible and the graphite susceptor or depositing a layer of SiC film on the surface of susceptor to prevent reaction between them.

本文言語英語
ページ(範囲)239-245
ページ数7
ジャーナルJournal of Crystal Growth
314
1
DOI
出版ステータス出版済み - 1 1 2011
外部発表はい

All Science Journal Classification (ASJC) codes

  • 凝縮系物理学
  • 無機化学
  • 材料化学

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