Both compressive strain (ε c) and hole mobility (μ h) were investigated for SiGe-on-insulator substrates with different values for the SiGe layer thickness (d) and Ge fraction (Ge%), which were fabricated by Ge condensation. We found that the ε c introduced during Ge condensation was strongly dependent on d and Ge%. Thinner d is helpful for maintaining higher ε c when Ge% is 50%. ε c is dramatically relaxed with a further increase in Ge%. By varying the tradeoff between Ge% and ε c, we achieved a maximum μ h of approximately 570 cm 2/V•s in the d range of 9-11 nm and Ge% range of 50-65%.
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