Influence of SiGe layer thickness and Ge fraction on compressive strain and hole mobility in a SiGe-on-insulator substrate fabricated by the Ge condensation technique

Haigui Yang, Dong Wang, Hiroshi Nakashima

研究成果: ジャーナルへの寄稿学術誌査読

5 被引用数 (Scopus)

抄録

Both compressive strain (ε c) and hole mobility (μ h) were investigated for SiGe-on-insulator substrates with different values for the SiGe layer thickness (d) and Ge fraction (Ge%), which were fabricated by Ge condensation. We found that the ε c introduced during Ge condensation was strongly dependent on d and Ge%. Thinner d is helpful for maintaining higher ε c when Ge% is 50%. ε c is dramatically relaxed with a further increase in Ge%. By varying the tradeoff between Ge% and ε c, we achieved a maximum μ h of approximately 570 cm 2/V•s in the d range of 9-11 nm and Ge% range of 50-65%.

本文言語英語
ページ(範囲)3283-3287
ページ数5
ジャーナルThin Solid Films
520
8
DOI
出版ステータス出版済み - 2月 1 2012

!!!All Science Journal Classification (ASJC) codes

  • 電子材料、光学材料、および磁性材料
  • 表面および界面
  • 表面、皮膜および薄膜
  • 金属および合金
  • 材料化学

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