Influence of SiGe layer thickness and Ge fraction on compressive strain and hole mobility in a SiGe-on-insulator substrate fabricated by the Ge condensation technique

研究成果: ジャーナルへの寄稿記事

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抄録

Both compressive strain (ε c) and hole mobility (μ h) were investigated for SiGe-on-insulator substrates with different values for the SiGe layer thickness (d) and Ge fraction (Ge%), which were fabricated by Ge condensation. We found that the ε c introduced during Ge condensation was strongly dependent on d and Ge%. Thinner d is helpful for maintaining higher ε c when Ge% is 50%. ε c is dramatically relaxed with a further increase in Ge%. By varying the tradeoff between Ge% and ε c, we achieved a maximum μ h of approximately 570 cm 2/V•s in the d range of 9-11 nm and Ge% range of 50-65%.

元の言語英語
ページ(範囲)3283-3287
ページ数5
ジャーナルThin Solid Films
520
発行部数8
DOI
出版物ステータス出版済み - 2 1 2012

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Hole mobility
hole mobility
Condensation
condensation
insulators
Substrates
tradeoffs

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

これを引用

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abstract = "Both compressive strain (ε c) and hole mobility (μ h) were investigated for SiGe-on-insulator substrates with different values for the SiGe layer thickness (d) and Ge fraction (Ge{\%}), which were fabricated by Ge condensation. We found that the ε c introduced during Ge condensation was strongly dependent on d and Ge{\%}. Thinner d is helpful for maintaining higher ε c when Ge{\%} is 50{\%}. ε c is dramatically relaxed with a further increase in Ge{\%}. By varying the tradeoff between Ge{\%} and ε c, we achieved a maximum μ h of approximately 570 cm 2/V•s in the d range of 9-11 nm and Ge{\%} range of 50-65{\%}.",
author = "Haigui Yang and Dong Wang and Hiroshi Nakashima",
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T1 - Influence of SiGe layer thickness and Ge fraction on compressive strain and hole mobility in a SiGe-on-insulator substrate fabricated by the Ge condensation technique

AU - Yang, Haigui

AU - Wang, Dong

AU - Nakashima, Hiroshi

PY - 2012/2/1

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N2 - Both compressive strain (ε c) and hole mobility (μ h) were investigated for SiGe-on-insulator substrates with different values for the SiGe layer thickness (d) and Ge fraction (Ge%), which were fabricated by Ge condensation. We found that the ε c introduced during Ge condensation was strongly dependent on d and Ge%. Thinner d is helpful for maintaining higher ε c when Ge% is 50%. ε c is dramatically relaxed with a further increase in Ge%. By varying the tradeoff between Ge% and ε c, we achieved a maximum μ h of approximately 570 cm 2/V•s in the d range of 9-11 nm and Ge% range of 50-65%.

AB - Both compressive strain (ε c) and hole mobility (μ h) were investigated for SiGe-on-insulator substrates with different values for the SiGe layer thickness (d) and Ge fraction (Ge%), which were fabricated by Ge condensation. We found that the ε c introduced during Ge condensation was strongly dependent on d and Ge%. Thinner d is helpful for maintaining higher ε c when Ge% is 50%. ε c is dramatically relaxed with a further increase in Ge%. By varying the tradeoff between Ge% and ε c, we achieved a maximum μ h of approximately 570 cm 2/V•s in the d range of 9-11 nm and Ge% range of 50-65%.

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