Influence of surface recombination on the performance of SiNW solar cells and the preparation of a passivation film

Shinya Kato, Yuya Watanabe, Yasuyoshi Kurokawa, Akira Yamada, Yoshimi Ohta, Yusuke Niwa, masaki Hirota

研究成果: Contribution to conferencePaper査読

抄録

Al2O3 was deposited on silicon nanowire (SiNW) arrays by atomic layer deposition (ALD) as a passivation layer to reduce surface recombination velocity. As a result, effective minority carrier lifetime was improved from 1.82 to 26.2 μs. From this result, the relative low-surface recombination rate of 2.73 cm/s was obtained from a calculation using one-dimensional device simulation (PC1D). The performance of SiNW solar cells was also simulated by considering the surface recombination velocity on the side of SiNWs using two-dimensional device simulation. It was found that Al 2O3 deposited by ALD can improve open-circuit voltage of SiNW solar cells even if the structure has a high-aspect ratio and large surface area. Therefore, improvement in the performance of SiNW solar cells can be expected.

本文言語英語
ページ33-38
ページ数6
DOI
出版ステータス出版済み - 1 1 2012
外部発表はい
イベント2012 MRS Fall Meeting - Boston, MA, 米国
継続期間: 11 25 201211 30 2012

その他

その他2012 MRS Fall Meeting
Country米国
CityBoston, MA
Period11/25/1211/30/12

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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