Influence of surface recombination on the performance of SiNW solar cells and the preparation of a passivation film

Shinya Kato, Yuya Watanabe, Yasuyoshi Kurokawa, Akira Yamada, Yoshimi Ohta, Yusuke Niwa, masaki Hirota

研究成果: 会議への寄与タイプ論文

抄録

Al2O3 was deposited on silicon nanowire (SiNW) arrays by atomic layer deposition (ALD) as a passivation layer to reduce surface recombination velocity. As a result, effective minority carrier lifetime was improved from 1.82 to 26.2 μs. From this result, the relative low-surface recombination rate of 2.73 cm/s was obtained from a calculation using one-dimensional device simulation (PC1D). The performance of SiNW solar cells was also simulated by considering the surface recombination velocity on the side of SiNWs using two-dimensional device simulation. It was found that Al 2O3 deposited by ALD can improve open-circuit voltage of SiNW solar cells even if the structure has a high-aspect ratio and large surface area. Therefore, improvement in the performance of SiNW solar cells can be expected.

元の言語英語
ページ33-38
ページ数6
DOI
出版物ステータス出版済み - 1 1 2012
外部発表Yes
イベント2012 MRS Fall Meeting - Boston, MA, 米国
継続期間: 11 25 201211 30 2012

その他

その他2012 MRS Fall Meeting
米国
Boston, MA
期間11/25/1211/30/12

Fingerprint

Silicon
Passivation
passivity
Nanowires
Solar cells
nanowires
solar cells
preparation
Atomic layer deposition
silicon
atomic layer epitaxy
Carrier lifetime
Open circuit voltage
carrier lifetime
minority carriers
high aspect ratio
open circuit voltage
Aspect ratio
simulation

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

これを引用

Kato, S., Watanabe, Y., Kurokawa, Y., Yamada, A., Ohta, Y., Niwa, Y., & Hirota, M. (2012). Influence of surface recombination on the performance of SiNW solar cells and the preparation of a passivation film. 33-38. 論文発表場所 2012 MRS Fall Meeting, Boston, MA, 米国. https://doi.org/10.1557/opl.2012.1747

Influence of surface recombination on the performance of SiNW solar cells and the preparation of a passivation film. / Kato, Shinya; Watanabe, Yuya; Kurokawa, Yasuyoshi; Yamada, Akira; Ohta, Yoshimi; Niwa, Yusuke; Hirota, masaki.

2012. 33-38 論文発表場所 2012 MRS Fall Meeting, Boston, MA, 米国.

研究成果: 会議への寄与タイプ論文

Kato, S, Watanabe, Y, Kurokawa, Y, Yamada, A, Ohta, Y, Niwa, Y & Hirota, M 2012, 'Influence of surface recombination on the performance of SiNW solar cells and the preparation of a passivation film' 論文発表場所 2012 MRS Fall Meeting, Boston, MA, 米国, 11/25/12 - 11/30/12, pp. 33-38. https://doi.org/10.1557/opl.2012.1747
Kato S, Watanabe Y, Kurokawa Y, Yamada A, Ohta Y, Niwa Y その他. Influence of surface recombination on the performance of SiNW solar cells and the preparation of a passivation film. 2012. 論文発表場所 2012 MRS Fall Meeting, Boston, MA, 米国. https://doi.org/10.1557/opl.2012.1747
Kato, Shinya ; Watanabe, Yuya ; Kurokawa, Yasuyoshi ; Yamada, Akira ; Ohta, Yoshimi ; Niwa, Yusuke ; Hirota, masaki. / Influence of surface recombination on the performance of SiNW solar cells and the preparation of a passivation film. 論文発表場所 2012 MRS Fall Meeting, Boston, MA, 米国.6 p.
@conference{0fe79dac30004d6ea7b4d4437b9959eb,
title = "Influence of surface recombination on the performance of SiNW solar cells and the preparation of a passivation film",
abstract = "Al2O3 was deposited on silicon nanowire (SiNW) arrays by atomic layer deposition (ALD) as a passivation layer to reduce surface recombination velocity. As a result, effective minority carrier lifetime was improved from 1.82 to 26.2 μs. From this result, the relative low-surface recombination rate of 2.73 cm/s was obtained from a calculation using one-dimensional device simulation (PC1D). The performance of SiNW solar cells was also simulated by considering the surface recombination velocity on the side of SiNWs using two-dimensional device simulation. It was found that Al 2O3 deposited by ALD can improve open-circuit voltage of SiNW solar cells even if the structure has a high-aspect ratio and large surface area. Therefore, improvement in the performance of SiNW solar cells can be expected.",
author = "Shinya Kato and Yuya Watanabe and Yasuyoshi Kurokawa and Akira Yamada and Yoshimi Ohta and Yusuke Niwa and masaki Hirota",
year = "2012",
month = "1",
day = "1",
doi = "10.1557/opl.2012.1747",
language = "English",
pages = "33--38",
note = "2012 MRS Fall Meeting ; Conference date: 25-11-2012 Through 30-11-2012",

}

TY - CONF

T1 - Influence of surface recombination on the performance of SiNW solar cells and the preparation of a passivation film

AU - Kato, Shinya

AU - Watanabe, Yuya

AU - Kurokawa, Yasuyoshi

AU - Yamada, Akira

AU - Ohta, Yoshimi

AU - Niwa, Yusuke

AU - Hirota, masaki

PY - 2012/1/1

Y1 - 2012/1/1

N2 - Al2O3 was deposited on silicon nanowire (SiNW) arrays by atomic layer deposition (ALD) as a passivation layer to reduce surface recombination velocity. As a result, effective minority carrier lifetime was improved from 1.82 to 26.2 μs. From this result, the relative low-surface recombination rate of 2.73 cm/s was obtained from a calculation using one-dimensional device simulation (PC1D). The performance of SiNW solar cells was also simulated by considering the surface recombination velocity on the side of SiNWs using two-dimensional device simulation. It was found that Al 2O3 deposited by ALD can improve open-circuit voltage of SiNW solar cells even if the structure has a high-aspect ratio and large surface area. Therefore, improvement in the performance of SiNW solar cells can be expected.

AB - Al2O3 was deposited on silicon nanowire (SiNW) arrays by atomic layer deposition (ALD) as a passivation layer to reduce surface recombination velocity. As a result, effective minority carrier lifetime was improved from 1.82 to 26.2 μs. From this result, the relative low-surface recombination rate of 2.73 cm/s was obtained from a calculation using one-dimensional device simulation (PC1D). The performance of SiNW solar cells was also simulated by considering the surface recombination velocity on the side of SiNWs using two-dimensional device simulation. It was found that Al 2O3 deposited by ALD can improve open-circuit voltage of SiNW solar cells even if the structure has a high-aspect ratio and large surface area. Therefore, improvement in the performance of SiNW solar cells can be expected.

UR - http://www.scopus.com/inward/record.url?scp=84899760895&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84899760895&partnerID=8YFLogxK

U2 - 10.1557/opl.2012.1747

DO - 10.1557/opl.2012.1747

M3 - Paper

AN - SCOPUS:84899760895

SP - 33

EP - 38

ER -