Influence of the addition of silsesquioxane on the dewetting behavior of polystyrene thin film

Nao Hosaka, Keiji Tanaka, Hideyuki Otsuka, Atsushi Takahara

研究成果: ジャーナルへの寄稿記事

19 引用 (Scopus)

抄録

A strategy to suppress the dewetting of polystyrene (PS) thin films by the addition of octacyclopentylsilsesquioxane (cPOSS) as a nanofiller was proposed. PS thin films with cPOSS were prepared by spin-coating. The bulk glass transition temperature of PS was not changed with an addition of the nanofiller up to 10 wt%. On the other hand, the addition of cPOSS to the PS thin films led to a great inhibition of dewetting. After annealing for 3 h at 373 K, no appreciable dewetting was observed by optical microscopy in the PS film with 15 wt% cPOSS, in contrast, the PS film without cPOSS was completely dewetted. Holes formed on the PS films with 10 wt% cPOSS. However, in that case, the growth of the holes stopped before reaching the final stage of the dewetting. This suggests that the increase of the cPOSS concentration per unit area at the rim of the holes prevents further growth of the holes, and this inhibition effect can be attributed to the interaction between cPOSS and the substrate accompanying modification of the PS-substrate interface.

元の言語英語
ページ(範囲)297-306
ページ数10
ジャーナルComposite Interfaces
11
発行部数4
DOI
出版物ステータス出版済み - 10 14 2004

Fingerprint

Polystyrenes
drying
polystyrene
Thin films
thin films
Spin coating
Substrates
rims
glass transition temperature
Optical microscopy
coating
Annealing
microscopy
annealing

All Science Journal Classification (ASJC) codes

  • Ceramics and Composites
  • Physics and Astronomy(all)
  • Surfaces, Coatings and Films

これを引用

Influence of the addition of silsesquioxane on the dewetting behavior of polystyrene thin film. / Hosaka, Nao; Tanaka, Keiji; Otsuka, Hideyuki; Takahara, Atsushi.

:: Composite Interfaces, 巻 11, 番号 4, 14.10.2004, p. 297-306.

研究成果: ジャーナルへの寄稿記事

@article{17352f14dc9047148357ef8ca5578879,
title = "Influence of the addition of silsesquioxane on the dewetting behavior of polystyrene thin film",
abstract = "A strategy to suppress the dewetting of polystyrene (PS) thin films by the addition of octacyclopentylsilsesquioxane (cPOSS) as a nanofiller was proposed. PS thin films with cPOSS were prepared by spin-coating. The bulk glass transition temperature of PS was not changed with an addition of the nanofiller up to 10 wt{\%}. On the other hand, the addition of cPOSS to the PS thin films led to a great inhibition of dewetting. After annealing for 3 h at 373 K, no appreciable dewetting was observed by optical microscopy in the PS film with 15 wt{\%} cPOSS, in contrast, the PS film without cPOSS was completely dewetted. Holes formed on the PS films with 10 wt{\%} cPOSS. However, in that case, the growth of the holes stopped before reaching the final stage of the dewetting. This suggests that the increase of the cPOSS concentration per unit area at the rim of the holes prevents further growth of the holes, and this inhibition effect can be attributed to the interaction between cPOSS and the substrate accompanying modification of the PS-substrate interface.",
author = "Nao Hosaka and Keiji Tanaka and Hideyuki Otsuka and Atsushi Takahara",
year = "2004",
month = "10",
day = "14",
doi = "10.1163/1568554041738157",
language = "English",
volume = "11",
pages = "297--306",
journal = "Composite Interfaces",
issn = "0927-6440",
publisher = "Taylor and Francis Ltd.",
number = "4",

}

TY - JOUR

T1 - Influence of the addition of silsesquioxane on the dewetting behavior of polystyrene thin film

AU - Hosaka, Nao

AU - Tanaka, Keiji

AU - Otsuka, Hideyuki

AU - Takahara, Atsushi

PY - 2004/10/14

Y1 - 2004/10/14

N2 - A strategy to suppress the dewetting of polystyrene (PS) thin films by the addition of octacyclopentylsilsesquioxane (cPOSS) as a nanofiller was proposed. PS thin films with cPOSS were prepared by spin-coating. The bulk glass transition temperature of PS was not changed with an addition of the nanofiller up to 10 wt%. On the other hand, the addition of cPOSS to the PS thin films led to a great inhibition of dewetting. After annealing for 3 h at 373 K, no appreciable dewetting was observed by optical microscopy in the PS film with 15 wt% cPOSS, in contrast, the PS film without cPOSS was completely dewetted. Holes formed on the PS films with 10 wt% cPOSS. However, in that case, the growth of the holes stopped before reaching the final stage of the dewetting. This suggests that the increase of the cPOSS concentration per unit area at the rim of the holes prevents further growth of the holes, and this inhibition effect can be attributed to the interaction between cPOSS and the substrate accompanying modification of the PS-substrate interface.

AB - A strategy to suppress the dewetting of polystyrene (PS) thin films by the addition of octacyclopentylsilsesquioxane (cPOSS) as a nanofiller was proposed. PS thin films with cPOSS were prepared by spin-coating. The bulk glass transition temperature of PS was not changed with an addition of the nanofiller up to 10 wt%. On the other hand, the addition of cPOSS to the PS thin films led to a great inhibition of dewetting. After annealing for 3 h at 373 K, no appreciable dewetting was observed by optical microscopy in the PS film with 15 wt% cPOSS, in contrast, the PS film without cPOSS was completely dewetted. Holes formed on the PS films with 10 wt% cPOSS. However, in that case, the growth of the holes stopped before reaching the final stage of the dewetting. This suggests that the increase of the cPOSS concentration per unit area at the rim of the holes prevents further growth of the holes, and this inhibition effect can be attributed to the interaction between cPOSS and the substrate accompanying modification of the PS-substrate interface.

UR - http://www.scopus.com/inward/record.url?scp=4744338217&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=4744338217&partnerID=8YFLogxK

U2 - 10.1163/1568554041738157

DO - 10.1163/1568554041738157

M3 - Article

AN - SCOPUS:4744338217

VL - 11

SP - 297

EP - 306

JO - Composite Interfaces

JF - Composite Interfaces

SN - 0927-6440

IS - 4

ER -