Infrared plasmonics via ZnO

J. W. Allen, M. S. Allen, D. C. Look, B. R. Wenner, Naho Itagaki, K. Matsushima, I. Surhariadi

研究成果: ジャーナルへの寄稿記事

2 引用 (Scopus)

抄録

Conventional plasmonic devices involve metals, but metal-based plasmonic resonances are mainly limited to λres < 1 μm, and thus metals interact effectively only with light in the UV and visible ranges. We show that highly doped ZnO can exhibit λres ≥ 1 μm, thus moving plasmonics into the IR range. We illustrate this capability with a set of thin (d = 25-147 nm) Al-doped ZnO (AZO) layers grown by RF sputtering on quartz glass. These samples employ a unique, 20-nmthick, ZnON buffer layer, which minimizes the strong thickness dependence of mobility (μ) on thickness (d). A practical waveguide structure, using these measurements, is simulated with COMSOL Multiphysics software over a mid-IR wavelength range of 4-10 μm, with a detailed examination of propagation loss and plasmon confinement dimension. In many cases, Lplas < λlight, thus showing that IR light can be manipulated in semiconductor materials at dimensions below the diffraction limit.

元の言語英語
ページ(範囲)109-119
ページ数11
ジャーナルJournal of Nano Research
28
DOI
出版物ステータス出版済み - 7 6 2014

Fingerprint

Metals
Infrared radiation
metals
Quartz
Buffer layers
Sputtering
Waveguides
quartz
buffers
Diffraction
examination
sputtering
Semiconductor materials
waveguides
computer programs
Glass
Wavelength
propagation
glass
diffraction

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Physics and Astronomy(all)

これを引用

Allen, J. W., Allen, M. S., Look, D. C., Wenner, B. R., Itagaki, N., Matsushima, K., & Surhariadi, I. (2014). Infrared plasmonics via ZnO. Journal of Nano Research, 28, 109-119. https://doi.org/10.4028/www.scientific.net/JNanoR.28.109

Infrared plasmonics via ZnO. / Allen, J. W.; Allen, M. S.; Look, D. C.; Wenner, B. R.; Itagaki, Naho; Matsushima, K.; Surhariadi, I.

:: Journal of Nano Research, 巻 28, 06.07.2014, p. 109-119.

研究成果: ジャーナルへの寄稿記事

Allen, JW, Allen, MS, Look, DC, Wenner, BR, Itagaki, N, Matsushima, K & Surhariadi, I 2014, 'Infrared plasmonics via ZnO', Journal of Nano Research, 巻. 28, pp. 109-119. https://doi.org/10.4028/www.scientific.net/JNanoR.28.109
Allen JW, Allen MS, Look DC, Wenner BR, Itagaki N, Matsushima K その他. Infrared plasmonics via ZnO. Journal of Nano Research. 2014 7 6;28:109-119. https://doi.org/10.4028/www.scientific.net/JNanoR.28.109
Allen, J. W. ; Allen, M. S. ; Look, D. C. ; Wenner, B. R. ; Itagaki, Naho ; Matsushima, K. ; Surhariadi, I. / Infrared plasmonics via ZnO. :: Journal of Nano Research. 2014 ; 巻 28. pp. 109-119.
@article{ca1d6fc4a76d495b8367b57cad20a5c0,
title = "Infrared plasmonics via ZnO",
abstract = "Conventional plasmonic devices involve metals, but metal-based plasmonic resonances are mainly limited to λres < 1 μm, and thus metals interact effectively only with light in the UV and visible ranges. We show that highly doped ZnO can exhibit λres ≥ 1 μm, thus moving plasmonics into the IR range. We illustrate this capability with a set of thin (d = 25-147 nm) Al-doped ZnO (AZO) layers grown by RF sputtering on quartz glass. These samples employ a unique, 20-nmthick, ZnON buffer layer, which minimizes the strong thickness dependence of mobility (μ) on thickness (d). A practical waveguide structure, using these measurements, is simulated with COMSOL Multiphysics software over a mid-IR wavelength range of 4-10 μm, with a detailed examination of propagation loss and plasmon confinement dimension. In many cases, Lplas < λlight, thus showing that IR light can be manipulated in semiconductor materials at dimensions below the diffraction limit.",
author = "Allen, {J. W.} and Allen, {M. S.} and Look, {D. C.} and Wenner, {B. R.} and Naho Itagaki and K. Matsushima and I. Surhariadi",
year = "2014",
month = "7",
day = "6",
doi = "10.4028/www.scientific.net/JNanoR.28.109",
language = "English",
volume = "28",
pages = "109--119",
journal = "Journal of Nano Research",
issn = "1662-5250",
publisher = "Trans Tech Publications",

}

TY - JOUR

T1 - Infrared plasmonics via ZnO

AU - Allen, J. W.

AU - Allen, M. S.

AU - Look, D. C.

AU - Wenner, B. R.

AU - Itagaki, Naho

AU - Matsushima, K.

AU - Surhariadi, I.

PY - 2014/7/6

Y1 - 2014/7/6

N2 - Conventional plasmonic devices involve metals, but metal-based plasmonic resonances are mainly limited to λres < 1 μm, and thus metals interact effectively only with light in the UV and visible ranges. We show that highly doped ZnO can exhibit λres ≥ 1 μm, thus moving plasmonics into the IR range. We illustrate this capability with a set of thin (d = 25-147 nm) Al-doped ZnO (AZO) layers grown by RF sputtering on quartz glass. These samples employ a unique, 20-nmthick, ZnON buffer layer, which minimizes the strong thickness dependence of mobility (μ) on thickness (d). A practical waveguide structure, using these measurements, is simulated with COMSOL Multiphysics software over a mid-IR wavelength range of 4-10 μm, with a detailed examination of propagation loss and plasmon confinement dimension. In many cases, Lplas < λlight, thus showing that IR light can be manipulated in semiconductor materials at dimensions below the diffraction limit.

AB - Conventional plasmonic devices involve metals, but metal-based plasmonic resonances are mainly limited to λres < 1 μm, and thus metals interact effectively only with light in the UV and visible ranges. We show that highly doped ZnO can exhibit λres ≥ 1 μm, thus moving plasmonics into the IR range. We illustrate this capability with a set of thin (d = 25-147 nm) Al-doped ZnO (AZO) layers grown by RF sputtering on quartz glass. These samples employ a unique, 20-nmthick, ZnON buffer layer, which minimizes the strong thickness dependence of mobility (μ) on thickness (d). A practical waveguide structure, using these measurements, is simulated with COMSOL Multiphysics software over a mid-IR wavelength range of 4-10 μm, with a detailed examination of propagation loss and plasmon confinement dimension. In many cases, Lplas < λlight, thus showing that IR light can be manipulated in semiconductor materials at dimensions below the diffraction limit.

UR - http://www.scopus.com/inward/record.url?scp=84902581785&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84902581785&partnerID=8YFLogxK

U2 - 10.4028/www.scientific.net/JNanoR.28.109

DO - 10.4028/www.scientific.net/JNanoR.28.109

M3 - Article

AN - SCOPUS:84902581785

VL - 28

SP - 109

EP - 119

JO - Journal of Nano Research

JF - Journal of Nano Research

SN - 1662-5250

ER -