InGaN quantum dots fabricated on AlGaN surfaces - growth mechanism and optical properties

H. Hirayama, Tanaka Satoru, P. Ramvall, Y. Aoyagi

研究成果: ジャーナルへの寄稿Conference article

抄録

We demonstrate photoluminescence from self-assembling InGaN quantum dots (QDs), which are artificially fabricated on AlGaN surfaces via metal-organic chemical vapor deposition. InGaN QDs are successfully fabricated by the growth mode transition from step-flow to three dimensional island formation by using anti-surfactant silicon on AlGaN surface. The diameter and height of the fabricated InGaN QDs are estimated to be approximately 10 nm and approximately 5 nm, respectively, by an atomic-force-microscope (AFM). Indium mole fraction of InxGa1-xN QDs is controlled from x = approximately 0.22 to approximately 0.52 by varying the growth temperature of QDs. Intense photoluminescence is observed even at room temperature from InGaN QDs embedded with the GaN capping layers. In addition, the temperature-dependent energy shift of the photoluminescence peak-energy shows a localization behavior.

元の言語英語
ページ(範囲)737-742
ページ数6
ジャーナルMaterials Research Society Symposium - Proceedings
482
出版物ステータス出版済み - 12 1 1997
外部発表Yes
イベントProceedings of the 1997 MRS Fall Meeting - Boston, MA, USA
継続期間: 12 1 199712 4 1997

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Semiconductor quantum dots
Optical properties
quantum dots
optical properties
Photoluminescence
photoluminescence
Organic Chemicals
Indium
Organic chemicals
Growth temperature
Silicon
Laser modes
assembling
Surface-Active Agents
metalorganic chemical vapor deposition
indium
aluminum gallium nitride
Chemical vapor deposition
Microscopes
Surface active agents

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

これを引用

InGaN quantum dots fabricated on AlGaN surfaces - growth mechanism and optical properties. / Hirayama, H.; Satoru, Tanaka; Ramvall, P.; Aoyagi, Y.

:: Materials Research Society Symposium - Proceedings, 巻 482, 01.12.1997, p. 737-742.

研究成果: ジャーナルへの寄稿Conference article

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abstract = "We demonstrate photoluminescence from self-assembling InGaN quantum dots (QDs), which are artificially fabricated on AlGaN surfaces via metal-organic chemical vapor deposition. InGaN QDs are successfully fabricated by the growth mode transition from step-flow to three dimensional island formation by using anti-surfactant silicon on AlGaN surface. The diameter and height of the fabricated InGaN QDs are estimated to be approximately 10 nm and approximately 5 nm, respectively, by an atomic-force-microscope (AFM). Indium mole fraction of InxGa1-xN QDs is controlled from x = approximately 0.22 to approximately 0.52 by varying the growth temperature of QDs. Intense photoluminescence is observed even at room temperature from InGaN QDs embedded with the GaN capping layers. In addition, the temperature-dependent energy shift of the photoluminescence peak-energy shows a localization behavior.",
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T1 - InGaN quantum dots fabricated on AlGaN surfaces - growth mechanism and optical properties

AU - Hirayama, H.

AU - Satoru, Tanaka

AU - Ramvall, P.

AU - Aoyagi, Y.

PY - 1997/12/1

Y1 - 1997/12/1

N2 - We demonstrate photoluminescence from self-assembling InGaN quantum dots (QDs), which are artificially fabricated on AlGaN surfaces via metal-organic chemical vapor deposition. InGaN QDs are successfully fabricated by the growth mode transition from step-flow to three dimensional island formation by using anti-surfactant silicon on AlGaN surface. The diameter and height of the fabricated InGaN QDs are estimated to be approximately 10 nm and approximately 5 nm, respectively, by an atomic-force-microscope (AFM). Indium mole fraction of InxGa1-xN QDs is controlled from x = approximately 0.22 to approximately 0.52 by varying the growth temperature of QDs. Intense photoluminescence is observed even at room temperature from InGaN QDs embedded with the GaN capping layers. In addition, the temperature-dependent energy shift of the photoluminescence peak-energy shows a localization behavior.

AB - We demonstrate photoluminescence from self-assembling InGaN quantum dots (QDs), which are artificially fabricated on AlGaN surfaces via metal-organic chemical vapor deposition. InGaN QDs are successfully fabricated by the growth mode transition from step-flow to three dimensional island formation by using anti-surfactant silicon on AlGaN surface. The diameter and height of the fabricated InGaN QDs are estimated to be approximately 10 nm and approximately 5 nm, respectively, by an atomic-force-microscope (AFM). Indium mole fraction of InxGa1-xN QDs is controlled from x = approximately 0.22 to approximately 0.52 by varying the growth temperature of QDs. Intense photoluminescence is observed even at room temperature from InGaN QDs embedded with the GaN capping layers. In addition, the temperature-dependent energy shift of the photoluminescence peak-energy shows a localization behavior.

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