Initiating stripe domains in bloch line memory

T. Suzuki, K. Matsuyama, H. Asada, S. Konishi

研究成果: Contribution to journalArticle査読

6 被引用数 (Scopus)

抄録

In order to form the 100 % grooving to stabilize multiple stripe domains in parallel, the LPE garnet film was chemically etched using hot conc phosphoric acid. The width and length of the grooved regions are around 3 µm and 100 µm respectively, and they were aligned in parallel at a period of around 12µm for a 5 µm bubble garnet film. After generating bubbles and stretching them through the non-grooved region, these stripes were chopped at both sides of the grooving. The resulting stripe domain walls enclose the grooved region, and are stabilized by the magneto-static effect from the grooved edge, which is vitally important for field access Bloch line propagation in Bloch line memory.

本文言語英語
ページ(範囲)3393-3395
ページ数3
ジャーナルIEEE Transactions on Magnetics
23
5
DOI
出版ステータス出版済み - 9 1987

All Science Journal Classification (ASJC) codes

  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学

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