Injection of current densities over kA/cm2 in organic thin films and investigation of charge-carrier transport mechanisms in current density region between nA/cm2 and kA/cm2

研究成果: Contribution to journalConference article査読

3 被引用数 (Scopus)

抄録

We investigate current density-voltage (J-V) characteristics of copper phthalocyanine thin-film devices, with active areas ranging from S = 1,000,000 to 7.9 μm2, and analyze their charge-carrier transport mechanisms under current densities between nA/cm2 and kA/cm2. We demonstrate injection of 128 kA/cm2 in the smallest device having S = 7.9 μ2. Furthermore, we find that J-V characteristics are divided into three regions between nA/cm2 and kA/cm2: ohm current, shallow-trap space-charge-limited current (SCLC), and trap-free SCLC. In a shallow-trap SCLC region, we observe a large shift in J-V characteristics depending upon the active areas. From analyses of carrier traps with a thermally stimulated current (TSC) measurement, we see that TSC signal intensities of these films decrease as the active area is reduced. Hence, we conclude that a large shift in J-V characteristics is attributable to the change of carrier trap concentrations in these films.

本文言語英語
論文番号63331O
ジャーナルProceedings of SPIE - The International Society for Optical Engineering
6333
DOI
出版ステータス出版済み - 12 1 2006
イベントOrganic Ligh Emitting Materials and Devices X - San Diego, CA, 米国
継続期間: 8 13 20068 16 2006

All Science Journal Classification (ASJC) codes

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • コンピュータ サイエンスの応用
  • 応用数学
  • 電子工学および電気工学

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「Injection of current densities over kA/cm<sup>2</sup> in organic thin films and investigation of charge-carrier transport mechanisms in current density region between nA/cm<sup>2</sup> and kA/cm<sup>2</sup>」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

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