抄録
A 1 × 4 optical switch consisting of a passive 1 × 4 splitter and four laser diode amplifier (SOA) gates was fabricated using higher-pressure bandgap-energy-controlled selective metal organic vapour phase epitaxy (MOVPE). By using this technique, core layers with a low-loss waveguide of 0.2dB/mm and an SOA were simultaneously integrated using one-step MOVPE. Insertion-loss-free operation was achieved at a low injection current of 58mA without any additional SOA.
本文言語 | 英語 |
---|---|
ページ(範囲) | 2265-2266 |
ページ数 | 2 |
ジャーナル | Electronics Letters |
巻 | 32 |
号 | 24 |
DOI | |
出版ステータス | 出版済み - 1996 |
外部発表 | はい |
!!!All Science Journal Classification (ASJC) codes
- 電子工学および電気工学