@article{c428e9b235cd4eb09650ee2e663115eb,
title = "Integration of High-k Oxide on MoS2 by Using Ozone Pretreatment for High-Performance MoS2 Top-Gated Transistor with Thickness-Dependent Carrier Scattering Investigation",
abstract = "A top-gated MoS2 transistor with 6 nm thick HfO2 is fabricated using an ozone pretreatment. The influence to the top-gated mobility brought about by the deposition of HfO2 is studied statistically, for the first time. The top-gated mobility is suppressed by the deposition of HfO2, and multilayered samples are less susceptible than monolayer ones.",
author = "Jingli Wang and Songlin Li and Xuming Zou and Johnny Ho and Lei Liao and Xiangheng Xiao and Changzhong Jiang and Weida Hu and Jianlu Wang and Jinchai Li",
note = "Publisher Copyright: {\textcopyright} 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. Copyright: Copyright 2016 Elsevier B.V., All rights reserved.",
year = "2015",
month = nov,
day = "25",
doi = "10.1002/smll.201501260",
language = "English",
volume = "11",
pages = "5932--5938",
journal = "Small",
issn = "1613-6810",
publisher = "Wiley-VCH Verlag",
number = "44",
}