抄録
A novel IPD (intelligent power device) technology for an automotive high-side switch has been developed which is applicable to devices up to the 60-V range. The fabrication process includes only one-time epitaxial growth. A new vertical DMOS FET with built-in cellular Zener diodes has also been developed. The avalanche capability of the DMOS is about 10 times greater than that of the conventional one. The control circuits of the developed IPD are protected against battery line transients by a 60-V Zener diode between the VDD and VSS terminals and two voltage limiters.
| 元の言語 | 英語 |
|---|---|
| ページ | 79-80 |
| ページ数 | 2 |
| 出版物ステータス | 出版済み - 12 1 1990 |
| イベント | Proceedings of the 2nd International Symposium on Power Semiconductor Devices and ICs - ISPSD '90 - Tokyo, Jpn 継続期間: 4 4 1990 → 4 6 1990 |
その他
| その他 | Proceedings of the 2nd International Symposium on Power Semiconductor Devices and ICs - ISPSD '90 |
|---|---|
| 市 | Tokyo, Jpn |
| 期間 | 4/4/90 → 4/6/90 |
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All Science Journal Classification (ASJC) codes
- Engineering(all)
これを引用
Intelligent power device having large immunity from transients in automotive applications. / Matsushita, T.; Mihara, T.; Ikeda, H.; Hirota, M.; Hirota, Y.
1990. 79-80 論文発表場所 Proceedings of the 2nd International Symposium on Power Semiconductor Devices and ICs - ISPSD '90, Tokyo, Jpn, .研究成果: 会議への寄与タイプ › 論文
}
TY - CONF
T1 - Intelligent power device having large immunity from transients in automotive applications
AU - Matsushita, T.
AU - Mihara, T.
AU - Ikeda, H.
AU - Hirota, M.
AU - Hirota, Y.
PY - 1990/12/1
Y1 - 1990/12/1
N2 - A novel IPD (intelligent power device) technology for an automotive high-side switch has been developed which is applicable to devices up to the 60-V range. The fabrication process includes only one-time epitaxial growth. A new vertical DMOS FET with built-in cellular Zener diodes has also been developed. The avalanche capability of the DMOS is about 10 times greater than that of the conventional one. The control circuits of the developed IPD are protected against battery line transients by a 60-V Zener diode between the VDD and VSS terminals and two voltage limiters.
AB - A novel IPD (intelligent power device) technology for an automotive high-side switch has been developed which is applicable to devices up to the 60-V range. The fabrication process includes only one-time epitaxial growth. A new vertical DMOS FET with built-in cellular Zener diodes has also been developed. The avalanche capability of the DMOS is about 10 times greater than that of the conventional one. The control circuits of the developed IPD are protected against battery line transients by a 60-V Zener diode between the VDD and VSS terminals and two voltage limiters.
UR - http://www.scopus.com/inward/record.url?scp=0025567746&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0025567746&partnerID=8YFLogxK
M3 - Paper
AN - SCOPUS:0025567746
SP - 79
EP - 80
ER -