Intelligent power device having large immunity from transients in automotive applications

T. Matsushita; T. Mihara; H. Ikeda; M. Hirota; Y. Hirota

Intelligent power device having large immunity from transients in automotive applications

T. Matsushita, T. Mihara, H. Ikeda, M. Hirota, Y. Hirota

研究成果: Contribution to conference › Paper › 査読

抄録

A novel IPD (intelligent power device) technology for an automotive high-side switch has been developed which is applicable to devices up to the 60-V range. The fabrication process includes only one-time epitaxial growth. A new vertical DMOS FET with built-in cellular Zener diodes has also been developed. The avalanche capability of the DMOS is about 10 times greater than that of the conventional one. The control circuits of the developed IPD are protected against battery line transients by a 60-V Zener diode between the V_DD and V_SS terminals and two voltage limiters.

本文言語	英語
ページ	79-80
ページ数	2
出版ステータス	出版済み - 12 1 1990
外部発表	はい
イベント	Proceedings of the 2nd International Symposium on Power Semiconductor Devices and ICs - ISPSD '90 - Tokyo, Jpn 継続期間: 4 4 1990 → 4 6 1990

その他

その他	Proceedings of the 2nd International Symposium on Power Semiconductor Devices and ICs - ISPSD '90
City	Tokyo, Jpn
Period	4/4/90 → 4/6/90

All Science Journal Classification (ASJC) codes

工学（全般）

他のファイルとリンク

引用スタイル

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title = "Intelligent power device having large immunity from transients in automotive applications",

abstract = "A novel IPD (intelligent power device) technology for an automotive high-side switch has been developed which is applicable to devices up to the 60-V range. The fabrication process includes only one-time epitaxial growth. A new vertical DMOS FET with built-in cellular Zener diodes has also been developed. The avalanche capability of the DMOS is about 10 times greater than that of the conventional one. The control circuits of the developed IPD are protected against battery line transients by a 60-V Zener diode between the VDD and VSS terminals and two voltage limiters.",

author = "T. Matsushita and T. Mihara and H. Ikeda and M. Hirota and Y. Hirota",

year = "1990",

month = dec,

day = "1",

language = "English",

pages = "79--80",

note = "Proceedings of the 2nd International Symposium on Power Semiconductor Devices and ICs - ISPSD '90 ; Conference date: 04-04-1990 Through 06-04-1990",

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T1 - Intelligent power device having large immunity from transients in automotive applications

AU - Matsushita, T.

AU - Mihara, T.

AU - Ikeda, H.

AU - Hirota, M.

AU - Hirota, Y.

PY - 1990/12/1

Y1 - 1990/12/1

N2 - A novel IPD (intelligent power device) technology for an automotive high-side switch has been developed which is applicable to devices up to the 60-V range. The fabrication process includes only one-time epitaxial growth. A new vertical DMOS FET with built-in cellular Zener diodes has also been developed. The avalanche capability of the DMOS is about 10 times greater than that of the conventional one. The control circuits of the developed IPD are protected against battery line transients by a 60-V Zener diode between the VDD and VSS terminals and two voltage limiters.

AB - A novel IPD (intelligent power device) technology for an automotive high-side switch has been developed which is applicable to devices up to the 60-V range. The fabrication process includes only one-time epitaxial growth. A new vertical DMOS FET with built-in cellular Zener diodes has also been developed. The avalanche capability of the DMOS is about 10 times greater than that of the conventional one. The control circuits of the developed IPD are protected against battery line transients by a 60-V Zener diode between the VDD and VSS terminals and two voltage limiters.

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T2 - Proceedings of the 2nd International Symposium on Power Semiconductor Devices and ICs - ISPSD '90

Y2 - 4 April 1990 through 6 April 1990

ER -

Intelligent power device having large immunity from transients in automotive applications

抄録

その他

All Science Journal Classification (ASJC) codes

他のファイルとリンク

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引用スタイル