Intelligent power device having large immunity from transients in automotive applications

T. Matsushita, T. Mihara, H. Ikeda, M. Hirota, Y. Hirota

研究成果: Contribution to conferencePaper

2 引用 (Scopus)

抜粋

A novel IPD (intelligent power device) technology for an automotive high-side switch has been developed which is applicable to devices up to the 60-V range. The fabrication process includes only one-time epitaxial growth. A new vertical DMOS FET with built-in cellular Zener diodes has also been developed. The avalanche capability of the DMOS is about 10 times greater than that of the conventional one. The control circuits of the developed IPD are protected against battery line transients by a 60-V Zener diode between the VDD and VSS terminals and two voltage limiters.

元の言語英語
ページ79-80
ページ数2
出版物ステータス出版済み - 12 1 1990
外部発表Yes
イベントProceedings of the 2nd International Symposium on Power Semiconductor Devices and ICs - ISPSD '90 - Tokyo, Jpn
継続期間: 4 4 19904 6 1990

その他

その他Proceedings of the 2nd International Symposium on Power Semiconductor Devices and ICs - ISPSD '90
Tokyo, Jpn
期間4/4/904/6/90

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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  • これを引用

    Matsushita, T., Mihara, T., Ikeda, H., Hirota, M., & Hirota, Y. (1990). Intelligent power device having large immunity from transients in automotive applications. 79-80. 論文発表場所 Proceedings of the 2nd International Symposium on Power Semiconductor Devices and ICs - ISPSD '90, Tokyo, Jpn, .