Interfacial charge transfer and charge generation in organic electronic devices

Toshinori Matsushima, Guang He Jin, Yoshihiro Kanai, Tomoyuki Yokota, Seiki Kitada, Toshiyuki Kishi, Hideyuki Murata

研究成果: ジャーナルへの寄稿学術誌査読

72 被引用数 (Scopus)

抄録

We have recently proposed that improvement of device performance using a buffer layer of molybdenum trioxide (MoO3) originates from interfacial charge generation at an interface of MoO3 and an organic hole-transport layer [17]. However, there is no clear experimental evidence enough to support the charge generation in our recent report. In this study, from comparison of current density-voltage characteristics of organic hole-only devices and ultraviolet/visible/near-infrared absorption spectra of composite films, we can conclude that the interfacial charge generation surly occurs to realize space-charge-limited currents of a wide variety of organic hole-transport layers. Moreover, a drastic increase in current density of a bilayer device of n-type C60 and p-type N,N′-diphenyl-N,N′-bis(1- naphthyl)-1,1′-biphenyl-4,4′-diamine (α-NPD) by using a MoO3 layer can provide the evidence of the charge generation.

本文言語英語
ページ(範囲)520-528
ページ数9
ジャーナルOrganic Electronics
12
3
DOI
出版ステータス出版済み - 3月 2011
外部発表はい

!!!All Science Journal Classification (ASJC) codes

  • 電子材料、光学材料、および磁性材料
  • 生体材料
  • 化学 (全般)
  • 凝縮系物理学
  • 材料化学
  • 電子工学および電気工学

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