Interfacial reactions between Ga and Cu-xNi (x=0, 2, 6, 10, 14) substrates and the strength of Cu-xNi/Ga/Cu-xNi joints

Shiqian Liu, Xin Fu Tan, Stuart D. McDonald, Qinfen Gu, Syo Matsumura, Kazuhiro Nogita

研究成果: ジャーナルへの寄稿学術誌査読

4 被引用数 (Scopus)

抄録

There is potential for using Ga and Ga-based alloys as low temperature bonding materials in electronic packaging. This study investigates the interfacial reactions between liquid Ga and Cu-xNi (x = 0, 2, 6, 10, 14 wt%) substrates at room temperature using Synchrotron X-ray powder diffraction and analytical scanning/transmission electron microscopy, and subsequently examines the lap shear strength of these joints. The concentration of Ni in the substrate has a strong effect on both the type of intermetallics that form and their rate of growth. Mechanisms of intermetallic growth and the strength of the joints fabricated with the Cu-xNi substrates are discussed along with the crystallography of the intermetallics and methods of joining.

本文言語英語
論文番号107168
ジャーナルIntermetallics
133
DOI
出版ステータス出版済み - 6月 2021

!!!All Science Journal Classification (ASJC) codes

  • 化学 (全般)
  • 材料力学
  • 機械工学
  • 金属および合金
  • 材料化学

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