Intrinsic carrier transport properties of solution-processed organic-inorganic perovskite films

Toshinori Matsushima, Sunbin Hwang, Shinobu Terakawa, Takashi Fujihara, Atula S.D. Sandanayaka, Chuanjiang Qin, Chihaya Adachi

研究成果: ジャーナルへの寄稿学術誌査読

23 被引用数 (Scopus)

抄録

The true performance of field-effect transistors with spin-coated organic-inorganic perovskite (C6H5C2H4NH3)2SnI4 semiconductor layers remains unknown because of the presence of contact resistance (RC). To evaluate the intrinsic carrier mobility (μ), we fabricated perovskite transistors with large channel lengths (L). The field-effect μ gradually increased with increasing L and then became constant in the large-L region, because of the reduced contribution of RC relative to the total resistance. The intrinsic μ values estimated from this region reached 26 and 4.8 cm2V%1 s%1 for holes and electrons, respectively, which are the highest ever reported in any perovskite transistor.

本文言語英語
論文番号024103
ジャーナルApplied Physics Express
10
2
DOI
出版ステータス出版済み - 2月 2017

!!!All Science Journal Classification (ASJC) codes

  • 工学(全般)
  • 物理学および天文学(全般)

フィンガープリント

「Intrinsic carrier transport properties of solution-processed organic-inorganic perovskite films」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル