Introduction of F4-TCNQ/MoO3 layers for thermoelectric devices based on pentacene

Shuang Hong Wu, Qi Sheng Zhang, Ryosuke Nakamichi, Masatsugu Taneda, Chihaya Adachi

研究成果: Contribution to journalArticle

1 引用 (Scopus)

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We introduced a dual electron accepting layer composed of tetrafluoro-tetracyanoquinodimethane (F4-TCNQ) and MoO3 for thermoelectric devices based on a pentacene layer. We found that the power factor is enhanced by placing an F4-TCNQ layer directly in contact with the pentacene layer and it is also enhanced by placing a MoO3 layer between the F4-TCNQ layer and the Au electrode. By examining the contact resistance using a field effect transistor and a hole-only diode, we confirmed that the hole injection is improved due to the reduction of contact resistance at the interface between the MoO3 layer and the Au electrode.

元の言語英語
記事番号098502
ジャーナルChinese Physics B
23
発行部数9
DOI
出版物ステータス出版済み - 1 1 2014

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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