TY - JOUR
T1 - Investigating HOMO Energy Levels of Terminal Emitters for Realizing High-Brightness and Stable TADF-Assisted Fluorescence Organic Light-Emitting Diodes
AU - Lee, Yi Ting
AU - Chan, Chin Yiu
AU - Tanaka, Masaki
AU - Mamada, Masashi
AU - Balijapalli, Umamahesh
AU - Tsuchiya, Youichi
AU - Nakanotani, Hajime
AU - Hatakeyama, Takuji
AU - Adachi, Chihaya
N1 - Funding Information:
This work was supported financially by the Program for Building Regional Innovation Ecosystems of the Ministry of Education, Culture, Sports, Science and Technology, Japan and Kyulux, Inc. The computation was mainly carried out using the computer facilities at Research Institute for Information Technology, Kyushu University. The authors also acknowledge Ms. Nozomi Nakamura and Ms. Keiko Kusuhara for their technical assistance with this research.
Publisher Copyright:
© 2021 Wiley-VCH GmbH
Copyright:
Copyright 2021 Elsevier B.V., All rights reserved.
PY - 2021/4
Y1 - 2021/4
N2 - By simple modification of the functional groups on the boron–nitrogen-containing skeleton, the energy level of the highest occupied molecular orbital (EHOMO) of emitters can be easily adjusted. Blue-emission derivatives are developed, which are capable of showing small full width at half maximums and high photoluminescence quantum yields. Blue thermally activated delayed fluorescence (TADF)-assisted fluorescence organic light-emitting diodes (TAF-OLEDs) based on two new emitters as the terminal emitter are fabricated, resulting in high external quantum efficiency (EQE) of up to 21.9%, high color purity, and high brightness (Lmax = 63 777 cd m−2). By analyzing the transient electroluminescence spectra of the TAF-OLEDs, it is found that a smaller EHOMO difference between TADF-assistant dopant (TADF-AD) and terminal emitter efficiently helps to decrease hole trapping inside the emitting layer, hence resulting in a lower efficiency rolloff and a longer operational device lifetime. TAF-OLEDs based on CzBNCz as a terminal emitter having the closest EHOMO to that of TADF-AD show a maximum EQE of 21.9% together with a reduced efficiency rolloff (EQEs of 21.2% and 19.8% at 100 and 1000 cd m−2, respectively). This research provides a designing principle for a terminal emitter in TAF-OLEDs with well-matched energy levels towards reaching the requirements of commercial displays.
AB - By simple modification of the functional groups on the boron–nitrogen-containing skeleton, the energy level of the highest occupied molecular orbital (EHOMO) of emitters can be easily adjusted. Blue-emission derivatives are developed, which are capable of showing small full width at half maximums and high photoluminescence quantum yields. Blue thermally activated delayed fluorescence (TADF)-assisted fluorescence organic light-emitting diodes (TAF-OLEDs) based on two new emitters as the terminal emitter are fabricated, resulting in high external quantum efficiency (EQE) of up to 21.9%, high color purity, and high brightness (Lmax = 63 777 cd m−2). By analyzing the transient electroluminescence spectra of the TAF-OLEDs, it is found that a smaller EHOMO difference between TADF-assistant dopant (TADF-AD) and terminal emitter efficiently helps to decrease hole trapping inside the emitting layer, hence resulting in a lower efficiency rolloff and a longer operational device lifetime. TAF-OLEDs based on CzBNCz as a terminal emitter having the closest EHOMO to that of TADF-AD show a maximum EQE of 21.9% together with a reduced efficiency rolloff (EQEs of 21.2% and 19.8% at 100 and 1000 cd m−2, respectively). This research provides a designing principle for a terminal emitter in TAF-OLEDs with well-matched energy levels towards reaching the requirements of commercial displays.
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U2 - 10.1002/aelm.202001090
DO - 10.1002/aelm.202001090
M3 - Article
AN - SCOPUS:85102388053
SN - 2199-160X
VL - 7
JO - Advanced Electronic Materials
JF - Advanced Electronic Materials
IS - 4
M1 - 2001090
ER -