Investigation of acceptable breakdown voltage variation for parallel-connected SiC MOSFETs during unclamped inductive switching test

研究成果: Contribution to journalArticle査読

抄録

Current flowing through parallel-connected SiC MOSFETs are imbalanced during unclamped inductive switching (UIS) test, which can be imaged as the emergency interruption of solid-state circuit breakers, due to variations of breakdown voltage. The imbalanced current can drive devices into thermal destruction. This study evaluated acceptable breakdown voltage variations of two parallel-connected SiC MOSFETs under different total current, load inductances, and breakdown voltage temperature coefficient conditions during UIS mode operation by numerical simulation. The acceptable variation at 298 K was found to decrease with increasing total current and be influenced by the change of total current greater with larger inductances. SiC MOSFETs with larger breakdown voltage temperature coefficients allowing larger variations were also clarified.

本文言語英語
論文番号SBBD18
ジャーナルJapanese journal of applied physics
60
SB
DOI
出版ステータス出版済み - 5 2021

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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