Investigation of carrier lifetimes in a thin 4H-SiC epilayer

Haigui Yang, Jinsong Gao, Hiroshi Nakashima

    研究成果: Chapter in Book/Report/Conference proceedingConference contribution

    抄録

    High-injection carrier lifetimes in thin 4H-SiC epilayers were investigated by using time-resolved photoluminescence method. It was found that the lifetimes in thin 4H-SiC epilayers were much shorter than that in relatively thick epilayers. Surface passivation using SiO2 and SiN films, as well as numerical simulation based on a diffusion equation were performed in order to clarify lifetime limiting factors. A comparison between experimental and theoretical results reveals that the major cause of extremely short carrier lifetimes in thin 4H-SiC epilayers is short bulk lifetime rather than recombination at the epilayer surface or in the substrate.

    本文言語英語
    ホスト出版物のタイトルProceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014
    編集者Jia Zhou, Ting-Ao Tang
    出版社Institute of Electrical and Electronics Engineers Inc.
    ISBN(電子版)9781479932962
    DOI
    出版ステータス出版済み - 1 23 2014
    イベント2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014 - Guilin, 中国
    継続期間: 10 28 201410 31 2014

    出版物シリーズ

    名前Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014

    その他

    その他2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014
    国/地域中国
    CityGuilin
    Period10/28/1410/31/14

    All Science Journal Classification (ASJC) codes

    • ハードウェアとアーキテクチャ
    • 電子工学および電気工学
    • コンピュータ サイエンスの応用

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