Investigation of charge compensation in indium-doped tin dioxide by hydrogen insertion via annealing under humid conditions

Ken Watanabe, Takeo Ohsawa, Isao Sakaguchi, Oliver Bierwagen, Mark E. White, Min Ying Tsai, Ryosuke Takahashi, Emily M. Ross, Yutaka Adachi, James S. Speck, Hajime Haneda, Naoki Ohashi

研究成果: Contribution to journalArticle査読

3 被引用数 (Scopus)

抄録

The behavior of hydrogen (H) as an impurity in indium (In)-doped tin dioxide (SnO2) was investigated by mass spectrometry analyses, with the aim of understanding the charge compensation mechanism in SnO2. The H-concentration of the In-doped SnO2 films increased to (1-2)×1019cm-3 by annealing in a humid atmosphere (WET annealing). The electron concentration in the films also increased after WET annealing but was two orders of magnitude less than their H-concentrations. A self-compensation mechanism, based on the assumption that H sits at substitutional sites, is proposed to explain the mismatch between the electron- and H-concentrations.

本文言語英語
論文番号132110
ジャーナルApplied Physics Letters
104
13
DOI
出版ステータス出版済み - 3 31 2014
外部発表はい

All Science Journal Classification (ASJC) codes

  • 物理学および天文学(その他)

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