Investigation of enhanced impact ionization in uniaxially strained Si n-channel metal oxide semiconductor field effect transistor

Shinichiro Adachi, Tanemasa Asano

研究成果: Contribution to journalArticle

4 引用 (Scopus)

抜粋

The impact ionization rate in uniaxially strained silicon is evaluated from viewpoints of the ionization threshold and maximum electric field Em for the first time. Strain and temperature dependences of β are investigated on the basis of the change in slope in a universal relation while Em, which is also dependent on strain and temperature, is investigated on the basis of the change in saturation voltage VDSAT. The impact ionization rate is a function of β and Em such that we also evaluated strain and temperature dependence of multiplication factor M-1 (= /sub=/ D) to determine the major concern of change in impact ionization rate. The result shows that the change in Em due to the change in potential drop along the channel is the major concern in a uniaxially strained silicon n-channel metal oxide semiconductor field effect transistor (nMOSFET).

元の言語英語
記事番号04DC14
ジャーナルJapanese journal of applied physics
49
発行部数4 PART 2
DOI
出版物ステータス出版済み - 4 1 2010

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

フィンガープリント Investigation of enhanced impact ionization in uniaxially strained Si n-channel metal oxide semiconductor field effect transistor' の研究トピックを掘り下げます。これらはともに一意のフィンガープリントを構成します。

  • これを引用