Investigation of gan solution growth processes on ga- and n-faces by molecular dynamics simulation

Takahiro Kawamura, Yoshihiro Kangawa, Koichi Kakimoto, Shigeo Kotake, Yasuyuki Suzuki

研究成果: Contribution to journalArticle査読

3 被引用数 (Scopus)

抄録

We carried out the molecular dynamics simulation of the solution growth of GaN and investigated the growth processes on Ga- and N-faces. An empirical potential function of the Brenner potential was used for the simulations. The simulation cell consisted of GaN substrates with Ga- and N-faces and Ga solution including N atoms. The results showed that the growth surface on the Ga-face laterally developed from a two-dimensional nucleus and became flat. On the other hand, the growth surface on the N-face developed by adhesive growth and became rough.

本文言語英語
論文番号01AF06
ジャーナルJapanese journal of applied physics
51
1 PART 2
DOI
出版ステータス出版済み - 1 1 2012

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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