Investigation of metallic interdiffusion in Al x Ga 1-x N/GaN/sapphire heterostructures used for microelectronic devices by SEM/EDX and SIMS depth profiling

Helena Tellez Lozano, J. M. Vadillo, J. J. Laserna

研究成果: ジャーナルへの寄稿記事

3 引用 (Scopus)

抄録

Secondary ion mass spectrometry (SIMS) depth profiling has been applied to the study of the thermal annealing of ohmic contacts for high electron mobility transistors. The metallic stacks (Ti/Al/Ni/Au) were deposited over the Al 0.28Ga0.72N/GaN/sapphire heterostructures and subjected to a rapid thermal annealing (850 °C for 30 s under N2 atmosphere) to improve the contact performance. The surface morphology and the in-depth chemical distribution of the layered contacts were severely modified due to the treatment. These modifications have been analyzed by SIMS depth profiling and scanning electron microscopy-energy-dispersive X-ray microanalysis. The SIMS analysis conditions have been optimized to achieve simultaneously good sensitivity and to avoid ion-induced mixing effects produced by the primary beam sputtering.

元の言語英語
ページ(範囲)2865-2871
ページ数7
ジャーナルAnalytical and Bioanalytical Chemistry
397
発行部数7
DOI
出版物ステータス出版済み - 8 1 2010

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Secondary Ion Mass Spectrometry
Depth profiling
Aluminum Oxide
Secondary ion mass spectrometry
Microelectronics
Heterojunctions
Energy dispersive spectroscopy
Equipment and Supplies
Scanning electron microscopy
Hot Temperature
Electron Probe Microanalysis
Ohmic contacts
Rapid thermal annealing
High electron mobility transistors
Atmosphere
Electron Scanning Microscopy
Surface morphology
Sputtering
Electrons
Annealing

All Science Journal Classification (ASJC) codes

  • Analytical Chemistry
  • Biochemistry

これを引用

Investigation of metallic interdiffusion in Al x Ga 1-x N/GaN/sapphire heterostructures used for microelectronic devices by SEM/EDX and SIMS depth profiling. / Tellez Lozano, Helena; Vadillo, J. M.; Laserna, J. J.

:: Analytical and Bioanalytical Chemistry, 巻 397, 番号 7, 01.08.2010, p. 2865-2871.

研究成果: ジャーナルへの寄稿記事

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abstract = "Secondary ion mass spectrometry (SIMS) depth profiling has been applied to the study of the thermal annealing of ohmic contacts for high electron mobility transistors. The metallic stacks (Ti/Al/Ni/Au) were deposited over the Al 0.28Ga0.72N/GaN/sapphire heterostructures and subjected to a rapid thermal annealing (850 °C for 30 s under N2 atmosphere) to improve the contact performance. The surface morphology and the in-depth chemical distribution of the layered contacts were severely modified due to the treatment. These modifications have been analyzed by SIMS depth profiling and scanning electron microscopy-energy-dispersive X-ray microanalysis. The SIMS analysis conditions have been optimized to achieve simultaneously good sensitivity and to avoid ion-induced mixing effects produced by the primary beam sputtering.",
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AU - Vadillo, J. M.

AU - Laserna, J. J.

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