TY - JOUR
T1 - Investigation of plasma parameters in a VHF plasma with narrow gap under high gaseous pressure
AU - Muta, Hiroshi
AU - Kishida, Shinichi
AU - Tanaka, Masayoshi
AU - Yamauchi, Yasuhiro
AU - Baba, Tomoyoshi
AU - Takeuchi, Yoshiaki
AU - Takatsuka, Hiromu
AU - Kawai, Yoshinobu
PY - 2009
Y1 - 2009
N2 - The plasma parameters in a VHF plasma with a narrow gap under high gaseous pressure were experimentally investigated. As a result of the Langmuir probe measurement for hydrogen plasma with a gap length of 5 mm and a pressure of 1 torr, it was found that the electron temperature (-10 eV) was high enough to promote the dissociation reaction of SiH4 molecules, and that a large amount of negative ions which could play a role in reducing the sheath potential were produced. On the other hand, the results of the ion measurement using a quadrupole mass spectrometer with an energy analyzer indicated that the highest produced ion was H3- and its incident energy to the substrate was low due to the collisions. These results suggest that the condition of high pressure and narrow gap are advantageous for the preparation of high-quality μc-Si thin films
AB - The plasma parameters in a VHF plasma with a narrow gap under high gaseous pressure were experimentally investigated. As a result of the Langmuir probe measurement for hydrogen plasma with a gap length of 5 mm and a pressure of 1 torr, it was found that the electron temperature (-10 eV) was high enough to promote the dissociation reaction of SiH4 molecules, and that a large amount of negative ions which could play a role in reducing the sheath potential were produced. On the other hand, the results of the ion measurement using a quadrupole mass spectrometer with an energy analyzer indicated that the highest produced ion was H3- and its incident energy to the substrate was low due to the collisions. These results suggest that the condition of high pressure and narrow gap are advantageous for the preparation of high-quality μc-Si thin films
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U2 - 10.1002/ppap.200931901
DO - 10.1002/ppap.200931901
M3 - Article
AN - SCOPUS:77954905767
VL - 6
SP - S792-S795
JO - Plasma Processes and Polymers
JF - Plasma Processes and Polymers
SN - 1612-8850
IS - SUPPL. 1
ER -