Investigation of spin scattering mechanism in silicon channels of Fe/MgO/Si lateral spin valves

Soobeom Lee, Naoto Yamashita, Yuichiro Ando, Shinji Miwa, Yoshishige Suzuki, Hayato Koike, Masashi Shiraishi

研究成果: Contribution to journalArticle査読

8 被引用数 (Scopus)

抄録

The temperature evolution of spin relaxation time, τsf, in degenerate silicon (Si)-based lateral spin valves is investigated by means of the Hanle effect measurements. τsf at 300 K is estimated to be 1.68 ± 0.03 ns and monotonically increased with decreasing temperature down to 100 K. Below 100 K, in contrast, it shows almost a constant value of ca. 5 ns. The temperature dependence of the conductivity of the Si channel shows a similar behavior to that of the τsf, i.e., monotonically increasing with decreasing temperature down to 100 K and a weak temperature dependence below 100 K. The temperature evolution of conductivity reveals that electron scattering due to magnetic impurities is negligible. A comparison between τsf and momentum scattering time reveals that the dominant spin scattering mechanism in the Si is the Elliott-Yafet mechanism, and the ratio of the momentum scattering time to the τsf attributed to nonmagnetic impurities is approximately 3.77 × 10−6, which is more than two orders of magnitude smaller than that of copper.

本文言語英語
論文番号192401
ジャーナルApplied Physics Letters
110
19
DOI
出版ステータス出版済み - 5 8 2017
外部発表はい

All Science Journal Classification (ASJC) codes

  • 物理学および天文学(その他)

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