Investigation of Surface Excitation Effect for Ablation of 4H-SiC Substrate Using Double-Pulse Beam

K. Matsunaga, T. Hayashi, S. Kurokawa, H. Yokoo, N. Hasegawa, M. Nishikino, T. Kumada, T. Otobe, Y. Matsukawa, Y. Takaya

研究成果: 書籍/レポート タイプへの寄稿会議への寄与

抄録

The authors investigate a low-fluence laser processing system with a femtosecond double-pulse beam and surface excitation of a power semiconductor wafer. The double-pulse laser processing method enables a semiconductor surface to be processed at a lower fluence and prevents penetration damage of the processed surface. The first pulse of the double beam is considered to have a role in exciting the semiconductor surface to increase the efficiency of light energy absorption. In this report, to verify the feasibility of low-fluence processing, we measure the damage threshold in the low-fluence ablation process.

本文言語英語
ホスト出版物のタイトルX-Ray Lasers 2016 - Proceedings of the 15th International Conference on X-Ray Lasers
編集者Tetsuya Kawachi, Sergei V. Bulanov, Hiroyuki Daido, Yoshiaki Kato
出版社Springer Science and Business Media, LLC
ページ321-326
ページ数6
ISBN(印刷版)9783319730240
DOI
出版ステータス出版済み - 2018
イベント15th International Conference on X-Ray Lasers, ICXRL 2016 - Nara, 日本
継続期間: 5月 22 20165月 27 2016

出版物シリーズ

名前Springer Proceedings in Physics
202
ISSN(印刷版)0930-8989
ISSN(電子版)1867-4941

その他

その他15th International Conference on X-Ray Lasers, ICXRL 2016
国/地域日本
CityNara
Period5/22/165/27/16

!!!All Science Journal Classification (ASJC) codes

  • 物理学および天文学(全般)

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